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SIDEGATING IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MESFETS) - ROLE OF STATIONARY GUNN DOMAINS
Authors: MCKINNON WR MCALISTER SP
Citation: Wr. Mckinnon et Sp. Mcalister, SIDEGATING IN GAAS METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MESFETS) - ROLE OF STATIONARY GUNN DOMAINS, Canadian journal of physics, 70(10-11), 1992, pp. 1064-1069
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