Authors: AJURIA SA MAITI B TOBIN PJ MELE TC

Citation: Sa. Ajuria et al., REEVALUATION OF THE BENEFITS OF POSTOXIDATION ANNEALING ON SUB-100 ANGSTROM GATE BRIDE QUALITY, IEEE electron device letters, 17(6), 1996, pp. 282-284

Authors: AJURIA SA KENKARE PU NGHIEM A MELE TC

Citation: Sa. Ajuria et al., KINETIC-ANALYSIS OF SILICON OXIDATIONS IN THE THIN REGIME BY INCREMENTAL GROWTH, Journal of applied physics, 76(8), 1994, pp. 4618-4624

Authors: HAYDEN JD BURNETT JD PERERA AH MELE TC WALCZYK FW KAUSHIK V LAGE CS SEE YC

Citation: Jd. Hayden et al., INTEGRATION OF A DOUBLE-POLYSILICON EMITTER BASE SELF-ALIGNED BIPOLAR-TRANSISTOR INTO A 0.5-MU-M BICMOS TECHNOLOGY FOR FAST 4-MB SRAMS, I.E.E.E. transactions on electron devices, 40(6), 1993, pp. 1121-1128

Authors: AJURIA SA FITCH JT WORKMAN D MELE TC

Citation: Sa. Ajuria et al., COMPARISON OF SURFACE-CHARGE ANALYSIS AND MOS C-V AS TECHNIQUES FOR IONIC IMPURITY DETECTION IN SI SIO2 STRUCTURES/, Journal of the Electrochemical Society, 140(7), 1993, pp. 120000113-120000115

Authors: JONES RE MELE TC

Citation: Re. Jones et Tc. Mele, USE OF SCREENING AND RESPONSE-SURFACE EXPERIMENTAL-DESIGNS FOR DEVELOPMENT OF A 0.5-MU-M CMOS SELF-ALIGNED TITANIUM SILICIDE PROCESS, IEEE transactions on semiconductor manufacturing, 4(4), 1991, pp. 281-287