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Results: 1-8 |
Results: 8
RECIPROCAL SPACE MAPPING FOR SEMICONDUCTOR SUBSTRATES AND DEVICE HETEROSTRUCTURES
Authors: GOORSKY MS MATNEY KM MESHKINPOUR M STREIT DC BLOCK TR
Citation: Ms. Goorsky et al., RECIPROCAL SPACE MAPPING FOR SEMICONDUCTOR SUBSTRATES AND DEVICE HETEROSTRUCTURES, Nuovo cimento della Societa italiana di fisica. D, Condensed matter,atomic, molecular and chemical physics, biophysics, 19(2-4), 1997, pp. 257-266
THE ROLE OF SUBSTRATE QUALITY ON MISFIT DISLOCATION FORMATION IN PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES
Authors: MESHKINPOUR M GOORSKY MS JENICHEN B STREIT DC BLOCK TR
Citation: M. Meshkinpour et al., THE ROLE OF SUBSTRATE QUALITY ON MISFIT DISLOCATION FORMATION IN PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES, Journal of applied physics, 81(7), 1997, pp. 3124-3128
EFFECT OF INTERFACE DEFECT FORMATION ON CARRIER DIFFUSION AND LUMINESCENCE IN IN0.2GA0.8AS ALXGA1-XAS QUANTUM-WELLS/
Authors: RICH DH RAMMOHAN K LIN HT TANG Y MESHKINPOUR M GOORSKY MS
Citation: Dh. Rich et al., EFFECT OF INTERFACE DEFECT FORMATION ON CARRIER DIFFUSION AND LUMINESCENCE IN IN0.2GA0.8AS ALXGA1-XAS QUANTUM-WELLS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2922-2935
DIFFUSE-X-RAY SCATTERING FROM MISFIT DISLOCATIONS AT SEMICONDUCTOR HETEROINTERFACES
Authors: GOORSKY MS MESHKINPOUR M STREIT DC BLOCK TR
Citation: Ms. Goorsky et al., DIFFUSE-X-RAY SCATTERING FROM MISFIT DISLOCATIONS AT SEMICONDUCTOR HETEROINTERFACES, Journal of physics. D, Applied physics, 28(4A), 1995, pp. 92-96
RELAXED SI1-XGEX FILMS WITH REDUCED DISLOCATION DENSITIES GROWN BY MOLECULAR-BEAM EPITAXY
Authors: TANNER MO CHU MA WANG KL MESHKINPOUR M GOORSKY MS
Citation: Mo. Tanner et al., RELAXED SI1-XGEX FILMS WITH REDUCED DISLOCATION DENSITIES GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 157(1-4), 1995, pp. 121-125
ROLE OF MISFIT DISLOCATIONS ON PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTORS
Authors: MESHKINPOUR M GOORSKY MS CHU G STREIT DC BLOCK TR WOJTOWICZ M
Citation: M. Meshkinpour et al., ROLE OF MISFIT DISLOCATIONS ON PSEUDOMORPHIC HIGH-ELECTRON-MOBILITY TRANSISTORS, Applied physics letters, 66(6), 1995, pp. 748-750
ROLE OF VOLUME FRACTION IN THE COARSENING OF NI3SI PRECIPITATES IN BINARY NI-SI ALLOYS
Authors: MESHKINPOUR M ARDELL AJ
Citation: M. Meshkinpour et Aj. Ardell, ROLE OF VOLUME FRACTION IN THE COARSENING OF NI3SI PRECIPITATES IN BINARY NI-SI ALLOYS, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 185(1-2), 1994, pp. 153-163
CHARACTERIZATION OF BURIED PSEUDOMORPHIC INGAAS LAYERS USING HIGH-RESOLUTION X-RAY-DIFFRACTION
Authors: MESHKINPOUR M GOORSKY MS MATNEY KM STREIT DC BLOCK TR
Citation: M. Meshkinpour et al., CHARACTERIZATION OF BURIED PSEUDOMORPHIC INGAAS LAYERS USING HIGH-RESOLUTION X-RAY-DIFFRACTION, Journal of applied physics, 76(6), 1994, pp. 3362-3366
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