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Results:
1-14
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Results: 14
Authors:
MANTL S
HACKE M
BAY HL
KAPPIUS L
MESTERS S
Citation: S. Mantl et al., SELF-ORDERING OF COSI2 PRECIPITATES AND EPITAXIAL LAYER GROWTH OF COSI2 ON SI(100), Thin solid films, 321, 1998, pp. 251-255
Authors:
KLINKHAMMER F
KAPPIUS L
MESTERS S
Citation: F. Klinkhammer et al., SUBMICROMETER PATTERNING OF EPITAXIAL COSI2 SI(111) BY LOCAL OXIDATION/, Thin solid films, 318(1-2), 1998, pp. 163-167
Authors:
MESTERS S
KLINKHAMMER F
DOLLE M
KAPPIUS L
MANTL S
Citation: S. Mesters et al., SUBMICROMETRIC STRUCTURING BY LOCAL OXIDA TION OF EPITAXIAL COSI2 ON SILICON, European journal of cell biology, 74, 1997, pp. 115-115
FORMATION OF TERNARY CO1-XPDXSI2 ON SI(100) BY PD ION-IMPLANTATION INCOSI2 SI(100) HETEROSTRUCTURES/
Authors:
TISCH U
HOLLANDER B
HACKE M
MESTERS S
MICHELSEN W
GUGGI D
MANTL S
KABIUS B
Citation: U. Tisch et al., FORMATION OF TERNARY CO1-XPDXSI2 ON SI(100) BY PD ION-IMPLANTATION INCOSI2 SI(100) HETEROSTRUCTURES/, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 324-327
Authors:
RUDERS F
KIM J
HACKE M
MESTERS S
BUCHAL C
MANTL S
Citation: F. Ruders et al., VERTICAL MSM PHOTODIODES IN SILICON-BASED ON EPITAXIAL SI COSI2/SI/, Thin solid films, 294(1-2), 1997, pp. 351-353
Authors:
HOLLANDER B
VESCAN L
MESTERS S
WICKENHAUSER S
Citation: B. Hollander et al., STRAIN AND MISFIT DISLOCATION DENSITY IN FINITE LATERAL SIZE SI1-XGEXFILMS GROWN BY SELECTIVE EPITAXY, Thin solid films, 292(1-2), 1997, pp. 213-217
Authors:
GORYLL M
VESCAN L
SCHMIDT K
MESTERS S
LUTH H
SZOT K
Citation: M. Goryll et al., SIZE DISTRIBUTION OF GE ISLANDS GROWN ON SI(001), Applied physics letters, 71(3), 1997, pp. 410-412
Authors:
WOHLLEBE A
HOLLANDER B
MESTERS S
DIEKER C
CRECELIUS G
MICHELSEN W
MANTL S
Citation: A. Wohllebe et al., SURFACE-DIFFUSION OF FE AND ISLAND GROWTH OF FESI2 ON SI(111) SURFACES, Thin solid films, 287(1-2), 1996, pp. 93-100
Authors:
CRECELIUS G
RADERMACHER K
DIEKER C
MESTERS S
Citation: G. Crecelius et al., BEAM-INDUCED PHASE-TRANSFORMATIONS AND SELF ANNEALING IN AS-IMPLANTEDIRON SILICIDES, Applied surface science, 91(1-4), 1995, pp. 50-55
Authors:
MANTL S
DOLLE M
MESTERS S
FICHTNER PFP
BAY HL
Citation: S. Mantl et al., PATTERNING METHOD FOR SILICIDES BASED ON LOCAL OXIDATION, Applied physics letters, 67(23), 1995, pp. 3459-3461
Authors:
HOLLANDER B
MANTL S
MICHELSEN W
MESTERS S
HARTMANN A
VESCAN L
GERTHSEN D
Citation: B. Hollander et al., FORMATION OF UNSTRAINED SI1-XGEX LAYERS BY HIGH-DOSE GE-74 ION-IMPLANTATION IN SIMOX, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 84(2), 1994, pp. 218-221
Authors:
MANTL S
MICHEL I
GUGGI D
BAY HL
MESTERS S
Citation: S. Mantl et al., FORMATION OF EPITAXIAL SI COSI2,/SI(100) HETEROSTRUCTURES USING ALLOTAXY/, Applied surface science, 73, 1993, pp. 102-107
Authors:
MULLER O
MANTL S
RADERMACHER K
BAY HL
CRECELIUS G
DIEKER C
MESTERS S
Citation: O. Muller et al., ALLOTAXIAL GROWTH OF EPITAXIAL SI FESI2,/SI HETEROSTRUCTURES/, Applied surface science, 73, 1993, pp. 141-145
Authors:
HOLLANDER B
MANTL S
MICHELSEN W
MESTERS S
Citation: B. Hollander et al., FORMATION OF RELAXED SI1-XGEX LAYERS ON SIMOX BY HIGH-DOSE GE-74 ION-IMPLANTATION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 80-1, 1993, pp. 777-780
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1-14
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