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Results: 1
HIGH PEAK-CURRENT-DENSITY STRAINED-LAYER IN0.3GA0.7AS AL0.8GA0.2AS RESONANT-TUNNELING DIODES GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/
Authors:
MIRABEDINI AR MAWST LJ BOTEZ D MARSLAND RA
Citation:
Ar. Mirabedini et al., HIGH PEAK-CURRENT-DENSITY STRAINED-LAYER IN0.3GA0.7AS AL0.8GA0.2AS RESONANT-TUNNELING DIODES GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/, Applied physics letters, 70(21), 1997, pp. 2867-2869
Risultati:
1-1
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