Authors:
MIRESHGHI A
LEE HK
HONG WS
DREWERY JS
JING T
KAPLAN SN
PEREZMENDEZ V
Citation: A. Mireshghi et al., IMPROVEMENT OF ELECTRONIC TRANSPORT CHARACTERISTICS OF AMORPHOUS-SILICON BY HYDROGEN DILUTION OF SILANE, JPN J A P 1, 34(6A), 1995, pp. 3012-3018
Authors:
HONG WS
DREWERY JS
JING T
LEE H
KAPLAN SN
MIRESHGHI A
PEREZMENDEZ V
Citation: Ws. Hong et al., THICK (SIMILAR-TO-50-MU-M) AMORPHOUS-SILICON P-I-N-DIODES FOR DIRECT-DETECTION OF MINIMUM IONIZING PARTICLES, Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 365(1), 1995, pp. 239-247
Authors:
HONG WS
MIRESHGHI A
DREWERY JS
JING T
KITSUNO Y
LEE H
KAPLAN SN
PEREZMENDEZ V
Citation: Ws. Hong et al., CHARGED-PARTICLE DETECTORS BASED ON HIGH AND QUALITY AMORPHOUS-SILICON DEPOSITED WITH HYDROGEN OR HELIUM DILUTION OF SILANE, IEEE transactions on nuclear science, 42(4), 1995, pp. 240-246
Authors:
JING T
GOODMAN CA
DREWERY J
CHO G
HONG WS
LEE H
KAPLAN SN
MIRESHGHI A
PEREZMENDEZ V
WILDERMUTH D
Citation: T. Jing et al., AMORPHOUS-SILICON PIXEL LAYERS WITH CESIUM IODIDE CONVERTERS FOR MEDICAL RADIOGRAPHY, IEEE transactions on nuclear science, 41(4), 1994, pp. 903-909
Authors:
MIRESHGHI A
CHO G
DREWERY JS
HONG WS
JING T
LEE H
KAPLAN SN
PEREZMENDEZ V
Citation: A. Mireshghi et al., HIGH-EFFICIENCY NEUTRON SENSITIVE AMORPHOUS-SILICON PIXEL DETECTORS, IEEE transactions on nuclear science, 41(4), 1994, pp. 915-921