Authors: PICHON L RAOULT F MOHAMEDBRAHIM T BONNAUD O SEHIL H

Citation: L. Pichon et al., EFFECTS OF THE IN-SITU DRAIN DOPING ON HOT-CARRIER DEGRADATION IN POLYSILICON THIN-FILM TRANSISTORS, Solid-state electronics, 39(7), 1996, pp. 1065-1069