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Citation: Gg. Devyatykh et al., INCORPORATION OF SI IN MOCVD GAAS EPILAYERS FROM THE TRIMETHYLGALLIUMSOURCE, Inorganic materials, 34(10), 1998, pp. 967-970

Authors: MOISEEV AN KOTKOV AP GOLUBEV AV GERASIMENKO VV SUCHKOV AI

Citation: An. Moiseev et al., PROPERTIES OF HG1-XCDXTE EPITAXIAL LAYERS PREPARED BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Inorganic materials, 32(3), 1996, pp. 276-279

Authors: DEVYATYKH GG KOTKOV AP LIVERKO VN MOISEEV AN

Citation: Gg. Devyatykh et al., EFFECT OF TEMPERATURE OF REACTOR WALLS ON GROWTH OF THE LAYERS OF CADMIUM TELLURIDE BY THE REACTION OF DIMETHYLCADMIUM WITH DIETHYLTELLURIDE, Doklady Akademii nauk. Rossijskaa akademia nauk, 340(3), 1995, pp. 331-333

Authors: DEGTYAREV GL ZAKIROV IM MOISEEV AN FIRSOV VA

Citation: Gl. Degtyarev et al., MAJOR TRENDS AND RESEARCH RESULTS ON EKRA NOPLAN MULTIUNIVERSITY SCIENTIFIC-TECHNICAL PROGRAM, Izvestia vyssih ucebnyh zavedenij. Aviacionnaa tehnika, (2), 1995, pp. 3-5

Authors: BULYGIN AV MOISEEV AN KARCHEVSKII AM

Citation: Av. Bulygin et al., CONCEPTION AND SELECTION OF DESIGN PARAME TERS OF TRANSPORT SCREEN PLANE, Izvestia vyssih ucebnyh zavedenij. Aviacionnaa tehnika, (2), 1995, pp. 6-8

Authors: DEVYATYKH GG ZASLONKO IS SMIRNOV VN MOISEEV AN VOTINTSEV VN TEREZA AM

Citation: Gg. Devyatykh et al., GAS-PHASE THERMAL-DECOMPOSITION OF DIETHYLTELLURIDE, Kinetics and catalysis, 34(2), 1993, pp. 185-189