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Results: 3
GERMANIUM ETCHING IN HIGH-DENSITY PLASMAS FOR 0.18 MU-M COMPLEMENTARYMETAL-OXIDE-SEMICONDUCTOR GATE PATTERNING APPLICATIONS
Authors: MONGET C SCHILTZ A JOUBERT O VALLIER L GUILLERMET M TORMEN B
Citation: C. Monget et al., GERMANIUM ETCHING IN HIGH-DENSITY PLASMAS FOR 0.18 MU-M COMPLEMENTARYMETAL-OXIDE-SEMICONDUCTOR GATE PATTERNING APPLICATIONS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(4), 1998, pp. 1833-1840
POLYSILICON-GERMANIUM GATE PATTERNING STUDIES IN A HIGH-DENSITY PLASMA HELICON SOURCE
Authors: VALLON S MONGET C JOUBERT O VALLIER L BELL FH PONS M REGOLINI JL MORIN C SAGNES I
Citation: S. Vallon et al., POLYSILICON-GERMANIUM GATE PATTERNING STUDIES IN A HIGH-DENSITY PLASMA HELICON SOURCE, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(4), 1997, pp. 1874-1880
X-RAY PHOTOELECTRON-SPECTROSCOPY ANALYSES OF OXIDE-MASKED POLYCRYSTALLINE SIGE FEATURES ETCHED IN A HIGH-DENSITY PLASMA SOURCE
Authors: MONGET C VALLON S BELL FH VALLIER L JOUBERT O
Citation: C. Monget et al., X-RAY PHOTOELECTRON-SPECTROSCOPY ANALYSES OF OXIDE-MASKED POLYCRYSTALLINE SIGE FEATURES ETCHED IN A HIGH-DENSITY PLASMA SOURCE, Journal of the Electrochemical Society, 144(7), 1997, pp. 2455-2461
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