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Results: 1-8 |
Results: 8
A CHARACTERIZATION OF THE MORPHOLOGY OFF POROUS SILICON FILMS BY PROTON ENERGY-LOSS FLUCTUATION MEASUREMENTS WITH A NARROW RESONANCE IN THEN-15(P,ALPHA-GAMMA)C-12 REACTION
Authors: AMSEL G DARTEMARE E BATTISTIG G MORAZZANI V ORTEGA C
Citation: G. Amsel et al., A CHARACTERIZATION OF THE MORPHOLOGY OFF POROUS SILICON FILMS BY PROTON ENERGY-LOSS FLUCTUATION MEASUREMENTS WITH A NARROW RESONANCE IN THEN-15(P,ALPHA-GAMMA)C-12 REACTION, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 122(1), 1997, pp. 99-112
THERMAL NITRIDATION OF P-TYPE POROUS SILICON IN AMMONIA
Authors: MORAZZANI V CANTIN JL ORTEGA C PAJOT B RAHBI R ROSENBAUER M VONBARDELEBEN HJ VAZSONYI E
Citation: V. Morazzani et al., THERMAL NITRIDATION OF P-TYPE POROUS SILICON IN AMMONIA, Thin solid films, 276(1-2), 1996, pp. 32-35
ANALYSIS OF THE SURFACES STRUCTURE IN POROUS SI
Authors: SCHOISSWOHL M VONBARDELEBEN HJ MORAZZANI V GROSMAN A ORTEGA C FROHNHOFF S BERGER MG MUNDER H
Citation: M. Schoisswohl et al., ANALYSIS OF THE SURFACES STRUCTURE IN POROUS SI, Thin solid films, 255(1-2), 1995, pp. 123-127
CONTRIBUTION OF IBA TECHNIQUES TO THE STUDY OF POROUS SILICON FILMS
Authors: MORAZZANI V GROSMAN A ORTEGA C RIGO S SIEJKA J
Citation: V. Morazzani et al., CONTRIBUTION OF IBA TECHNIQUES TO THE STUDY OF POROUS SILICON FILMS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 85(1-4), 1994, pp. 287-292
STUDY OF ANODIC-OXIDATION OF POROUS SILICON - RELATION BETWEEN GROWTHAND PHYSICAL-PROPERTIES
Authors: GROSMAN A CHAMARRO M MORAZZANI V ORTEGA C RIGO S SIEJKA J VONBARDELEBEN HJ
Citation: A. Grosman et al., STUDY OF ANODIC-OXIDATION OF POROUS SILICON - RELATION BETWEEN GROWTHAND PHYSICAL-PROPERTIES, Journal of luminescence, 57(1-6), 1993, pp. 13-18
P-B-DEFECTS AND VISIBLE PHOTOLUMINESCENCE IN POROUS SILICON
Authors: VONBARDELEBEN HJ CHAMARRO M GROSMAN A MORAZZANI V ORTEGA C SIEJKA J RIGO S
Citation: Hj. Vonbardeleben et al., P-B-DEFECTS AND VISIBLE PHOTOLUMINESCENCE IN POROUS SILICON, Journal of luminescence, 57(1-6), 1993, pp. 39-43
PARTIAL OXIDATION OF POROUS SILICON BY THERMAL-PROCESS - STUDY OF STRUCTURE AND ELECTRONIC DEFECTS
Authors: MORAZZANI V CHAMARRO M GROSMAN A ORTEGA C RIGO S SIEJKA J VONBARDELEBEN HJ
Citation: V. Morazzani et al., PARTIAL OXIDATION OF POROUS SILICON BY THERMAL-PROCESS - STUDY OF STRUCTURE AND ELECTRONIC DEFECTS, Journal of luminescence, 57(1-6), 1993, pp. 45-49
DEFECT AND STRUCTURE-ANALYSIS OF N(-, P(+)- AND P-TYPE POROUS SILICONBY THE ELECTRON-PARAMAGNETIC-RESONANCE TECHNIQUE())
Authors: VONBARDELEBEN HJ ORTEGA C GROSMAN A MORAZZANI V SIEJKA J STIEVENARD D
Citation: Hj. Vonbardeleben et al., DEFECT AND STRUCTURE-ANALYSIS OF N(-, P(+)- AND P-TYPE POROUS SILICONBY THE ELECTRON-PARAMAGNETIC-RESONANCE TECHNIQUE()), Journal of luminescence, 57(1-6), 1993, pp. 301-313
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