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Results: 1-21 |
Results: 21
ROLE OF TE ON THE MORPHOLOGY OF INAS SELF-ASSEMBLED ISLANDS
Authors: SAFAR GAM RODRIGUES WN MOREIRA MVB DEOLIVEIRA AG NEVES BRA VILELA JM ANDRADE MS ROCHET F
Citation: Gam. Safar et al., ROLE OF TE ON THE MORPHOLOGY OF INAS SELF-ASSEMBLED ISLANDS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(5), 1998, pp. 2633-2638
ELECTRON EFFECTIVE-MASS DETERMINATION IN ASYMMETRIC MODULATION-DOPED FIELD-EFFECT TRANSISTOR HETEROSTRUCTURES USING INXGA1-XAS QUANTUM-WELLAND INAS-GAAS SUPERLATTICE CHANNELS
Authors: CURY LA MATINAGA FM FREIRE SLS MOREIRA MVB BEERENS J PY MA
Citation: La. Cury et al., ELECTRON EFFECTIVE-MASS DETERMINATION IN ASYMMETRIC MODULATION-DOPED FIELD-EFFECT TRANSISTOR HETEROSTRUCTURES USING INXGA1-XAS QUANTUM-WELLAND INAS-GAAS SUPERLATTICE CHANNELS, Superlattices and microstructures, 23(5), 1998, pp. 1019-1025
TEMPERATURE TUNING OF EXCITON-PHOTON COUPLING IN A MICROCAVITY GROWN ON A (311)A GAAS SUBSTRATE
Authors: MATINAGA FM CURY LA VALADARES EC MOREIRA MVB RODRIGUES WN DEOLIVEIRA AG VILELA JMC ANDRADE MS SLUSS JA
Citation: Fm. Matinaga et al., TEMPERATURE TUNING OF EXCITON-PHOTON COUPLING IN A MICROCAVITY GROWN ON A (311)A GAAS SUBSTRATE, Superlattices and microstructures, 23(1), 1998, pp. 181-186
EXPLOITING INTERFACE FORM BIREFRINGENCE IN VERTICAL MICROCAVITIES
Authors: VALADARES EC CURY LA MATINAGA FM MOREIRA MVB
Citation: Ec. Valadares et al., EXPLOITING INTERFACE FORM BIREFRINGENCE IN VERTICAL MICROCAVITIES, Microelectronic engineering, 43-4, 1998, pp. 605-610
ELECTRICAL AND OPTICAL CORRELATION IN THE STUDY OF THE DEPOPULATION EFFECT IN ASYMMETRIC QUANTUM-WELLS
Authors: ALVES AR GUIMARAES PSS CURY LA MOREIRA MVB LINO AT SCOLFARO LMR
Citation: Ar. Alves et al., ELECTRICAL AND OPTICAL CORRELATION IN THE STUDY OF THE DEPOPULATION EFFECT IN ASYMMETRIC QUANTUM-WELLS, Physical review. B, Condensed matter, 58(11), 1998, pp. 6720-6723
THERMALLY STIMULATED CURRENT SPECTROSCOPY ON SILICON PLANAR-DOPED GAAS SAMPLES
Authors: RUBINGER RM BEZERRA JC CHAGAS EF GONZALEZ JC RODRIGUES WN RIBEIRO GM MOREIRA MVB DEOLIVEIRA AG
Citation: Rm. Rubinger et al., THERMALLY STIMULATED CURRENT SPECTROSCOPY ON SILICON PLANAR-DOPED GAAS SAMPLES, Journal of applied physics, 84(7), 1998, pp. 3764-3769
COHERENT-TO-INCOHERENT TRANSITION IN SURFACTANT-MEDIATED GROWTH OF INAS QUANTUM DOTS
Authors: NEVES BRA ANDRADE MS RODRIGUES WN SAFAR GAM MOREIRA MVB DEOLIVEIRA AG
Citation: Bra. Neves et al., COHERENT-TO-INCOHERENT TRANSITION IN SURFACTANT-MEDIATED GROWTH OF INAS QUANTUM DOTS, Applied physics letters, 72(14), 1998, pp. 1712-1714
CYCLOTRON-RESONANCE IN ASYMMETRIC MODULATION-DOPED FIELD-EFFECT TRANSISTOR HETEROSTRUCTURES USING INXGA1-XAS QUANTUM-WELL AND INAS-GAAS SUPERLATTICE CHANNELS
Authors: CURY LA MATINAGA FM FREIRE SLS MOREIRA MVB BEERENS J PY MA
Citation: La. Cury et al., CYCLOTRON-RESONANCE IN ASYMMETRIC MODULATION-DOPED FIELD-EFFECT TRANSISTOR HETEROSTRUCTURES USING INXGA1-XAS QUANTUM-WELL AND INAS-GAAS SUPERLATTICE CHANNELS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 15(5), 1997, pp. 1697-1702
OSCILLATORY BEHAVIOR OF MAGNETOOPTICAL INTERBAND EMISSIONS IN ASYMMETRIC QUANTUM-WELL STRUCTURES
Authors: ALVES AR CURY LA GUIMARAES PSS MOREIRA MVB
Citation: Ar. Alves et al., OSCILLATORY BEHAVIOR OF MAGNETOOPTICAL INTERBAND EMISSIONS IN ASYMMETRIC QUANTUM-WELL STRUCTURES, Superlattices and microstructures, 21(4), 1997, pp. 591-595
THE EL2-LIKE METASTABLE DEFECT AND THE N-TYPE TO P-TYPE TRANSITION INSILICON PLANAR-DOPED GAAS
Authors: DASILVA MIN DEOLIVEIRA AG RIBEIRO GM RUBINGER RM CORREA JA MOREIRA MVB
Citation: Min. Dasilva et al., THE EL2-LIKE METASTABLE DEFECT AND THE N-TYPE TO P-TYPE TRANSITION INSILICON PLANAR-DOPED GAAS, Journal of applied physics, 82(7), 1997, pp. 3346-3350
INTERFACE FORM BIREFRINGENCE IN NATIVE OXIDED MICROCAVITIES
Authors: VALADARES EC CURY LA MATINAGA FM MOREIRA MVB
Citation: Ec. Valadares et al., INTERFACE FORM BIREFRINGENCE IN NATIVE OXIDED MICROCAVITIES, Journal of applied physics, 82(3), 1997, pp. 1500-1502
EFFECT OF TE AS A SURFACTANT ON THE OPTICAL-PROPERTIES OF INAS SELF-ASSEMBLED QUANTUM DOTS
Authors: SAFAR GAM RODRIGUES WN CURY LA CHACHAM H MOREIRA MVB FREIRE SLS DEOLIVEIRA AG
Citation: Gam. Safar et al., EFFECT OF TE AS A SURFACTANT ON THE OPTICAL-PROPERTIES OF INAS SELF-ASSEMBLED QUANTUM DOTS, Applied physics letters, 71(4), 1997, pp. 521-523
QUASI-PERIODIC MICROFACETS ON THE SURFACE OF ALGAAS GAAS QUANTUM-WELLSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY ON (311)A HIGH-INDEX SUBSTRATES/
Authors: FREIRE SLS CURY LA MATINAGA FM VALADARES EC MOREIRA MVB DEOLIVEIRA AG ALVES AR VILELA JMC ANDRADE MS LIMA TM SLUSS JA
Citation: Sls. Freire et al., QUASI-PERIODIC MICROFACETS ON THE SURFACE OF ALGAAS GAAS QUANTUM-WELLSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY ON (311)A HIGH-INDEX SUBSTRATES/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3555-3558
PHOTO-HALL STUDIES OF MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH SHORT-PERIOD SUPERLATTICE CHANNELS RATHER THAN ALLOY CHANNELS
Authors: MOREIRA MVB DEOLIVEIRA AG PY MA
Citation: Mvb. Moreira et al., PHOTO-HALL STUDIES OF MODULATION-DOPED FIELD-EFFECT TRANSISTORS WITH SHORT-PERIOD SUPERLATTICE CHANNELS RATHER THAN ALLOY CHANNELS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(5), 1996, pp. 3350-3356
EVIDENCE FOR THE COEXISTENCE OF 2-DIMENSIONAL AND 3-DIMENSIONAL ELECTRON GASES IN THE EMITTER OF DOUBLE-BARRIER DEVICES
Authors: NEVES BRA SAMPAIO JF ALVES ES MOREIRA MVB DEOLIVEIRA AG
Citation: Bra. Neves et al., EVIDENCE FOR THE COEXISTENCE OF 2-DIMENSIONAL AND 3-DIMENSIONAL ELECTRON GASES IN THE EMITTER OF DOUBLE-BARRIER DEVICES, Superlattices and microstructures, 20(2), 1996, pp. 181-186
TEMPERATURE-DEPENDENCE OF THE EQUILIBRIUM HALL CONCENTRATION IN SILICON PLANAR-DOPED GAAS SAMPLES
Authors: CORREA JA DEOLIVEIRA AG DASILVA MIN MOREIRA MVB RIBEIRO GM CHACHAM H
Citation: Ja. Correa et al., TEMPERATURE-DEPENDENCE OF THE EQUILIBRIUM HALL CONCENTRATION IN SILICON PLANAR-DOPED GAAS SAMPLES, Solid state communications, 98(12), 1996, pp. 1063-1068
REDUCTION OF THE EFFECTS OF INGAAS ALLOY DISORDER BY USING INAS GAAS SUPERLATTICES AS THE CONDUCTION CHANNEL IN MODULATION-DOPED HETEROSTRUCTURES/
Authors: MOREIRA MVB DEOLIVEIRA AG PY MA
Citation: Mvb. Moreira et al., REDUCTION OF THE EFFECTS OF INGAAS ALLOY DISORDER BY USING INAS GAAS SUPERLATTICES AS THE CONDUCTION CHANNEL IN MODULATION-DOPED HETEROSTRUCTURES/, Solid state communications, 97(1), 1996, pp. 11-15
SELF-INDUCED PERSISTENT PHOTOCONDUCTIVITY IN RESONANT-TUNNELING DEVICES
Authors: NEVES BRA ALVES ES SAMPAIO JF DEOLIVEIRA AG MOREIRA MVB
Citation: Bra. Neves et al., SELF-INDUCED PERSISTENT PHOTOCONDUCTIVITY IN RESONANT-TUNNELING DEVICES, Applied physics letters, 69(8), 1996, pp. 1125-1127
HIGHER MOBILITY OF CHARGE-CARRIERS IN INAS GAAS SUPERLATTICES THROUGHTHE ELIMINATION OF INGAAS ALLOY DISORDERS ON GAAS/
Authors: MOREIRA MVB DEOLIVEIRA AG PY MA
Citation: Mvb. Moreira et al., HIGHER MOBILITY OF CHARGE-CARRIERS IN INAS GAAS SUPERLATTICES THROUGHTHE ELIMINATION OF INGAAS ALLOY DISORDERS ON GAAS/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(5), 1995, pp. 2064-2068
MIGRATION OF SILICON ATOMS IN PLANAR-DOPED GAAS ALGAAS MODULATION-DOPED FLUID EFFECT TRANSISTOR HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/
Authors: CARVALHO ATG DEOLIVEIRA AG ALVES ES MOREIRA MVB
Citation: Atg. Carvalho et al., MIGRATION OF SILICON ATOMS IN PLANAR-DOPED GAAS ALGAAS MODULATION-DOPED FLUID EFFECT TRANSISTOR HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY/, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 149-155
PHOTO-HALL STUDIES OF MODULATION-DOPED FIELD-EFFECT TRANSISTOR HETEROSTRUCTURES USING (INAS)(M)(GAAS)(N) SUPERLATTICE CHANNELS
Authors: MOREIRA MVB DEOLIVEIRA AG PY MA
Citation: Mvb. Moreira et al., PHOTO-HALL STUDIES OF MODULATION-DOPED FIELD-EFFECT TRANSISTOR HETEROSTRUCTURES USING (INAS)(M)(GAAS)(N) SUPERLATTICE CHANNELS, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 391-395
Risultati: 1-21 |