Authors:
HULSMANN A
MUHLFRIEDEL E
RAYNOR B
GLORER K
BRONNER W
KOHLER K
SCHNEIDER J
BRAUNSTEIN J
SCHLECHTWEG M
TASKER P
THIEDE A
JAKOBUS T
Citation: A. Hulsmann et al., 0.15 MU-M T-GATE E-BEAM LITHOGRAPHY USING CROSS-LINKED P(MMA MAA) DEVELOPED IN ORTHO-XYLENE RESULTING IN HIGH-CONTRAST AND HIGH PLASMA STABILITY FOR DRY-ETCHED RECESS GATE PSEUDOMORPHIC MODFETS FOR MMIC PRODUCTION/, Microelectronic engineering, 23(1-4), 1994, pp. 437-440