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Results: 1-3 |
Results: 3
Defect reduction in GaN epilayers and HFET structures grown on (0001)sapphire by ammonia MBE
Authors: Webb, JB Tang, H Bardwell, JA Moisa, S Peters, C MacElwee, T
Citation: Jb. Webb et al., Defect reduction in GaN epilayers and HFET structures grown on (0001)sapphire by ammonia MBE, J CRYST GR, 230(3-4), 2001, pp. 584-589
Growth of high-performance GaN modulation-doped field-effect transistors by ammonia-molecular-beam epitaxy
Authors: Tang, H Webb, JB Bardwell, JA MacElwee, T
Citation: H. Tang et al., Growth of high-performance GaN modulation-doped field-effect transistors by ammonia-molecular-beam epitaxy, J VAC SCI A, 18(2), 2000, pp. 652-655
Reproducibility of growing AlGaN/GaN high-electron-mobility-transistor heterostructures by molecular-beam epitaxy
Authors: Tang, H Webb, JB Bardwell, JA Rolfe, S MacElwee, T
Citation: H. Tang et al., Reproducibility of growing AlGaN/GaN high-electron-mobility-transistor heterostructures by molecular-beam epitaxy, SOL ST ELEC, 44(12), 2000, pp. 2177-2182
Risultati: 1-3 |