Authors: Yamaguchi, H Nishizawa, S Kato, T Oyanagi, N Bahng, W Yoshida, S Arai, K Machitani, Y Kikuchi, T

Citation: H. Yamaguchi et al., In situ x-ray topography of silicon carbide during crystal growth by sublimation method, REV SCI INS, 71(7), 2000, pp. 2829-2832