Authors: Madhavi, S Rao, GVS Chowdari, BVR Li, SFY

Citation: S. Madhavi et al., Effect of aluminium doping on cathodic behaviour of LiNi0.7Co0.3O2, J POWER SOU, 93(1-2), 2001, pp. 156-162

Authors: Madhavi, S Venkataraman, V Xie, YH

Citation: S. Madhavi et al., High room-temperature hole mobility in Ge0.7Si0.3/Ge/Ge0.7Si0.3 modulation-doped heterostructures, J APPL PHYS, 89(4), 2001, pp. 2497-2499

Authors: Madhavi, S Rao, GVS Chowdari, BVR Li, SFY

Citation: S. Madhavi et al., Synthesis and cathodic properties of LiCo1-yRhyO2 (0 <= y <= 0.2.) and LiRhO2, J ELCHEM SO, 148(11), 2001, pp. A1279-A1286

Authors: Madhavi, S Venkataraman, V Sturm, JC Xie, YH

Citation: S. Madhavi et al., Low- and high-field transport properties of modulation-doped Si/SiGe and Ge/SiGe heterostructures: Effect of phonon confinement in germanium quantum wells, PHYS REV B, 61(24), 2000, pp. 16807-16818

Authors: Madhavi, S Venkataraman, V

Citation: S. Madhavi et V. Venkataraman, Hot carrier transport in modulation doped Si/SiGe and Ge/SiGe heterostructures, THIN SOL FI, 369(1-2), 2000, pp. 333-337