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Results: 1-25/28
Authors:
Chen, ZH
Baklenov, O
Kim, ET
Mukhametzhanov, I
Tie, J
Madhukar, A
Ye, Z
Campbell, JC
Citation: Zh. Chen et al., InAs/AlxGa1-xAs quantum dot infrared photodetectors with undoped active region, INFR PHYS T, 42(3-5), 2001, pp. 479-484
Authors:
Rosen, IG
Parent, T
Cooper, C
Chen, P
Madhukar, A
Citation: Ig. Rosen et al., A neural-network-based approach to determining a robust process recipe forthe plasma-enhanced deposition of silicon nitride thin films, IEEE CON SY, 9(2), 2001, pp. 271-284
Authors:
Meltzer, S
Resch, R
Koel, BE
Thompson, ME
Madhukar, A
Requicha, AAG
Will, P
Citation: S. Meltzer et al., Fabrication of nanostructures by hydroxylamine seeding of gold nanoparticle templates, LANGMUIR, 17(5), 2001, pp. 1713-1718
Authors:
Resch, R
Meltzer, S
Vallant, T
Hoffmann, H
Koel, BE
Madhukar, A
Requicha, AAG
Will, P
Citation: R. Resch et al., Immobilizing Au nanoparticles on SiO2 surfaces using octadecylsiloxane monolayers, LANGMUIR, 17(18), 2001, pp. 5666-5670
Authors:
Mukhametzhanov, I
Chen, ZH
Baklenov, O
Kim, ET
Madhukar, A
Citation: I. Mukhametzhanov et al., Optical and photocurrent spectroscopy studies of inter- and intra-band transitions in size-tailored InAs/GaAs quantum dots, PHYS ST S-B, 224(3), 2001, pp. 697-702
Authors:
Heitz, R
Guffarth, F
Mukhametzhanov, I
Stier, O
Madhukar, A
Bimberg, D
Citation: R. Heitz et al., Excited states of InAs/GaAs quantum dots, PHYS ST S-B, 224(2), 2001, pp. 367-371
Authors:
Makeev, MA
Madhukar, A
Citation: Ma. Makeev et A. Madhukar, Simulations of atomic level stresses in systems of buried Ge/Si islands, PHYS REV L, 86(24), 2001, pp. 5542-5545
Authors:
Chen, ZH
Baklenov, O
Kim, ET
Mukhametzhanov, I
Tie, J
Madhukar, A
Ye, Z
Campbell, JC
Citation: Zh. Chen et al., Normal incidence InAs/AlxGa1-xAs quantum dot infrared photodetectors with undoped active region, J APPL PHYS, 89(8), 2001, pp. 4558-4563
Authors:
Kim, ET
Chen, ZH
Madhukar, A
Citation: Et. Kim et al., Tailoring detection bands of InAs quantum-dot infrared photodetectors using InxGa1-xAs strain-relieving quantum wells, APPL PHYS L, 79(20), 2001, pp. 3341-3343
Authors:
Su, XT
Kalia, RK
Nakano, A
Vashishta, P
Madhukar, A
Citation: Xt. Su et al., Million-atom molecular dynamics simulation of flat InAs overlayers with self-limiting thickness on GaAs square nanomesas, APPL PHYS L, 78(23), 2001, pp. 3717-3719
Authors:
Resch, R
Lewis, D
Meltzer, S
Montoya, N
Koel, BE
Madhukar, A
Requicha, AAG
Will, P
Citation: R. Resch et al., Manipulation of gold nanoparticles in liquid environments using scanning force microscopy, ULTRAMICROS, 82(1-4), 2000, pp. 135-139
Authors:
Heitz, R
Guffarth, F
Mukhametzhanov, I
Grundmann, M
Madhukar, A
Bimberg, D
Citation: R. Heitz et al., Many-body effects on the optical spectra of InAs/GaAs quantum dots, PHYS REV B, 62(24), 2000, pp. 16881-16885
Authors:
Heitz, R
Stier, O
Mukhametzhanov, I
Madhukar, A
Bimberg, D
Citation: R. Heitz et al., Quantum size effect in self-organized InAs/GaAs quantum dots, PHYS REV B, 62(16), 2000, pp. 11017-11028
Authors:
Omeltchenko, A
Bachlechner, ME
Nakano, A
Kalia, RK
Vashishta, P
Ebbsjo, I
Madhukar, A
Messina, P
Citation: A. Omeltchenko et al., Stress domains in Si(111)/a-Si3N4 nanopixel: Ten-million-atom molecular dynamics simulations on parallel computers, PHYS REV L, 84(2), 2000, pp. 318-321
Authors:
Bachlechner, ME
Omeltchenko, A
Nakano, A
Kalia, RK
Vashishta, P
Ebbsjo, I
Madhukar, A
Citation: Me. Bachlechner et al., Dislocation emission at the silicon/silicon nitride interface: A million atom molecular dynamics simulation on parallel computers, PHYS REV L, 84(2), 2000, pp. 322-325
Authors:
Nakano, A
Bachlechner, ME
Branicio, P
Campbell, TJ
Ebbsjo, I
Kalia, RK
Madhukar, A
Ogata, S
Omeltchenko, A
Rino, JP
Shimojo, F
Walsh, P
Vashishta, P
Citation: A. Nakano et al., Large-scale atomistic modeling of nanoelectronic structures, IEEE DEVICE, 47(10), 2000, pp. 1804-1810
Authors:
Heitz, R
Born, H
Hoffmann, A
Bimberg, D
Mukhametzhanov, I
Madhukar, A
Citation: R. Heitz et al., Resonant Raman scattering in self-organized InAs/GaAs quantum dots, APPL PHYS L, 77(23), 2000, pp. 3746-3748
Authors:
Rich, DH
Zhang, C
Mukhametzhanov, I
Madhukar, A
Citation: Dh. Rich et al., Cathodoluminescence wavelength imaging of mu m-scale energy variations in InAs/GaAs self-assembled quantum dots, APPL PHYS L, 76(24), 2000, pp. 3597-3599
Authors:
Resch, R
Baur, C
Bugacov, A
Koel, BE
Echternach, PM
Madhukar, A
Montoya, N
Requicha, AAG
Will, P
Citation: R. Resch et al., Linking and manipulation of gold multinanoparticle structures using dithiols and scanning force microscopy, J PHYS CH B, 103(18), 1999, pp. 3647-3650
Authors:
Bachlechner, ME
Kalia, RK
Nakano, A
Omeltchenko, A
Vashishta, P
Ebbsjo, I
Madhukar, A
Zhao, GL
Citation: Me. Bachlechner et al., Structural correlations at Si/Si3N4 interface and atomic stresses in Si/Si3N4 nanopixel-10 million-atom molecular dynamics simulation on parallel computers, J EUR CERAM, 19(13-14), 1999, pp. 2265-2272
Authors:
Heitz, R
Mukhametzanov, I
Born, H
Grundmann, M
Hoffmann, A
Madhukar, A
Bimberg, D
Citation: R. Heitz et al., Hot carrier relaxation in InAs/GaAs quantum dots, PHYSICA B, 272(1-4), 1999, pp. 8-11
Authors:
Wang, CM
Chen, P
Madhukar, A
Khan, T
Citation: Cm. Wang et al., A machine condition transfer function approach to run-to-run and machine-to-machine reproducibility of III-V compound semiconductor molecular beam epitaxical growth, IEEE SEMIC, 12(1), 1999, pp. 66-75
Authors:
Heitz, R
Mukhametzhanov, I
Zeng, J
Chen, P
Madhukar, A
Bimberg, D
Citation: R. Heitz et al., Excitation transfer in novel self-organized quantum dot structures, SUPERLATT M, 25(1-2), 1999, pp. 97-104
Authors:
Heitz, R
Mukhametzhanov, I
Madhukar, A
Hoffmann, A
Bimberg, D
Citation: R. Heitz et al., Temperature dependent optical properties of self-organized InAs GaAs quantum dots, J ELEC MAT, 28(5), 1999, pp. 520-527
Authors:
Heitz, R
Mukhametzhanov, I
Stier, O
Madhukar, A
Bimberg, D
Citation: R. Heitz et al., Enhanced polar exciton-LO-phonon interaction in quantum dots, PHYS REV L, 83(22), 1999, pp. 4654-4657