Authors: Magee, CW Jacobson, D Gossmann, HJ

Citation: Cw. Magee et al., Accuracy of secondary ion mass spectrometry in determining ion implanted Bdoses as confirmed by nuclear reaction analysis, J VAC SCI B, 18(1), 2000, pp. 489-492

Authors: Mills, AP Pfeiffer, LN West, KW Magee, CW

Citation: Ap. Mills et al., Mechanisms for Si dopant migration in molecular beam epitaxy AlxGa1-xAs, J APPL PHYS, 88(7), 2000, pp. 4056-4060

Authors: Chia, VKF Mount, GR Edgell, MJ Magee, CW

Citation: Vkf. Chia et al., Recent advances in secondary ion mass spectrometry to characterize ultralow energy ion implants, J VAC SCI B, 17(5), 1999, pp. 2345-2351

Authors: Magee, CW Mount, GR Smith, SP Herner, B Gossmann, HJ

Citation: Cw. Magee et al., Sputtering rate change and surface roughening during oblique and normal incidence O-2(+) bombardment of silicon, with and without oxygen flooding, J VAC SCI B, 16(6), 1998, pp. 3099-3104