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Results:
1-7
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Results: 7
Authors:
Medjdoub, M
Courant, JL
Maher, H
Post, G
Citation: M. Medjdoub et al., Inductively coupled plasma - plasma enhanced chemical vapor deposition silicon nitride for passivation of InP based high electron mobility transistors (HEMTs), MAT SCI E B, 80(1-3), 2001, pp. 252-256
Authors:
Cavassilas, N
Aniel, F
Boucaud, P
Adde, R
Maher, H
Decobert, J
Scavennec, A
Citation: N. Cavassilas et al., Electroluminescence of composite channel InAlAs/InGaAs/InP/InAlAs high electron mobility transistor, J APPL PHYS, 87(5), 2000, pp. 2548-2552
Authors:
Maher, H
DiSanto, DW
Dvorak, MW
Soerensen, G
Bolognesi, CR
Bardwell, JA
Tang, H
Webb, JB
Citation: H. Maher et al., High-speed AlGaN/GaN HFETs fabricated by wet etching mesa isolation, ELECTR LETT, 36(23), 2000, pp. 1969-1971
Authors:
Maher, H
DiSanto, DW
Soerensen, G
Bolognesi, CR
Tang, H
Webb, JB
Citation: H. Maher et al., Smooth wet etching by ultraviolet-assisted photoetching and its application to the fabrication of AlGaN/GaN heterostructure field-effect transistors, APPL PHYS L, 77(23), 2000, pp. 3833-3835
Authors:
Braathen, A
Bergh, S
Karlsen, F
Maher, H
Andresen, A
Hansen, AI
Bergvik, A
Citation: A. Braathen et al., Kinematics of the Isfjorden-Ymerbukta Fault Zone: a dextral oblique-thrustramp in the Tertiary fold-thrust belt of Spitsbergen, NORSK GEOL, 79(4), 1999, pp. 227-239
Authors:
Maher, H
Decobert, J
Falcou, A
Le Pallec, M
Post, G
Nissim, YI
Scavennec, A
Citation: H. Maher et al., A triple channel HEMT on InP (Camel HEMT) for large-signal high-speed applications, IEEE DEVICE, 46(1), 1999, pp. 32-37
Authors:
Decobert, J
Rondeau, G
Maher, H
Ladner, C
Falcou, A
Biblemont, S
Post, G
Citation: J. Decobert et al., Doping optimizations for InGaAs/InP composite channel HEMTs, J CRYST GR, 195(1-4), 1998, pp. 681-686
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1-7
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