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Results:
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Results: 7
MOVPE growth of highly-strained piezoelectric InGaAs/GaAs quantum wells on[111]A-oriented substrates
Authors:
Kim, J
Cho, S
Sanz-Hervas, A
Majerfeld, A
Kim, BW
Citation: J. Kim et al., MOVPE growth of highly-strained piezoelectric InGaAs/GaAs quantum wells on[111]A-oriented substrates, J CRYST GR, 225(2-4), 2001, pp. 415-419
Authors:
Cho, S
Majerfeld, A
Sanz-Hervas, A
Sanchez, JJ
Sanchez-Rojas, JL
Izpura, I
Citation: S. Cho et al., Determination of the pyroelectric coefficient in strained InGaAs/GaAs quantum wells grown on (111)B GaAs substrates, J APPL PHYS, 90(2), 2001, pp. 915-917
Authors:
Kim, J
Cho, S
Sanz-Hervas, A
Majerfeld, A
Kim, BW
Citation: J. Kim et al., MOVPE growth and properties of P-I-N InGaAs/GaAs strained multi-quantum well structures on (111)A GaAs substrates, J CRYST GR, 221, 2000, pp. 525-529
Authors:
Sanz-Hervas, A
Cho, S
Majerfeld, A
Kim, BW
Citation: A. Sanz-hervas et al., Interfacial properties of (111)A GaAs/AlGaAs multiquantum-well structures grown by metalorganic vapor phase epitaxy, APPL PHYS L, 76(21), 2000, pp. 3073-3075
Authors:
Cho, SH
Sanz-Hervas, A
Kovalenkov, OV
Majerfeld, A
Villar, C
Kim, BW
Citation: Sh. Cho et al., Photoreflectance evaluation of MOVPE AlGaAs/GaAs multiple quantum wells on(111)A GaAs, MAT SCI E B, 66(1-3), 1999, pp. 123-125
Authors:
Cho, S
Sanz-Hervas, A
Kim, J
Majerfeld, A
Villar, C
Kim, BM
Citation: S. Cho et al., Metalorganic vapor phase epitaxy growth and properties of GaAs/AlGaAs and InGaAs/GaAs quantum well structures on (111)A GaAs substrates, MICROELEC J, 30(4-5), 1999, pp. 455-459
Authors:
Sanz-Hervas, A
Cho, S
Kim, J
Majerfeld, A
Villar, C
Kim, BW
Citation: A. Sanz-hervas et al., Effect of the growth parameters on the luminescence properties of high-quality GaAs/AlGaAs multiquantum wells on (111)A substrates by metal organic vapor phase epitaxy, J CRYST GR, 195(1-4), 1998, pp. 558-563
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