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Results: 1-25 | 26-27
Results: 1-25/27
Gallium droplet formation during MOVPE and thermal annealing of GaN
Authors: Karpov, SY Bord, OV Talalaev, RA Makarov, YN
Citation: Sy. Karpov et al., Gallium droplet formation during MOVPE and thermal annealing of GaN, MAT SCI E B, 82(1-3), 2001, pp. 22-24
Comparison of silicon epitaxial growth on the 200-and 300-mm wafers from trichlorosilane in Centura reactors
Authors: Segal, AS Galyukov, AO Kondratyev, AV Sid'ko, AP Karpov, SY Makarov, YN Siebert, W Storck, P
Citation: As. Segal et al., Comparison of silicon epitaxial growth on the 200-and 300-mm wafers from trichlorosilane in Centura reactors, MICROEL ENG, 56(1-2), 2001, pp. 93-98
Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt-crystal interface
Authors: Evstratov, IY Kalaev, VV Nabokov, VN Zhmakin, AI Makarov, YN Abramov, AG Ivanov, NG Rudinsky, EA Smirnov, EM Lowry, SA Dornberger, E Virbulis, J Tomzig, E Von Ammon, W
Citation: Iy. Evstratov et al., Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt-crystal interface, MICROEL ENG, 56(1-2), 2001, pp. 139-142
Modeling analysis of unsteady three-dimensional turbulent melt flow duringCzochralski growth of Si crystals
Authors: Evstratov, IY Kalaev, VV Zhmakin, AI Makarov, YN Abramov, AG Ivanov, NG Smirnov, EM Dornberger, E Virbulis, J Tomzig, E von Ammon, W
Citation: Iy. Evstratov et al., Modeling analysis of unsteady three-dimensional turbulent melt flow duringCzochralski growth of Si crystals, J CRYST GR, 230(1-2), 2001, pp. 22-29
On low temperature kinetic effects in metal-organic vapor phase epitaxy ofIII-V compounds
Authors: Talalaev, RA Yakovlev, EV Karpov, SY Makarov, YN
Citation: Ra. Talalaev et al., On low temperature kinetic effects in metal-organic vapor phase epitaxy ofIII-V compounds, J CRYST GR, 230(1-2), 2001, pp. 232-238
Quasi-thermodynamic model of SiGe epitaxial growth
Authors: Segal, AS Karpov, SY Sid'ko, AP Makarov, YN
Citation: As. Segal et al., Quasi-thermodynamic model of SiGe epitaxial growth, J CRYST GR, 225(2-4), 2001, pp. 268-273
Virtual reactor as a new tool for modeling and optimization of SiC bulk crystal growth
Authors: Bogdanov, MV Galyukov, AO Karpov, SY Kulik, AV Kochuguev, SK Ofengeim, DK Tsiryulnikov, AV Ramm, MS Zhmakin, AI Makarov, YN
Citation: Mv. Bogdanov et al., Virtual reactor as a new tool for modeling and optimization of SiC bulk crystal growth, J CRYST GR, 225(2-4), 2001, pp. 307-311
Advanced model of metal-organic chemical vapor deposition of BaxSr1-xTiO3 oxides
Authors: Mymrin, VF Smirnov, SA Komissarov, AE Karpov, SY Przhevalski, IN Makarov, YN Dauelsberg, M Schumacher, M Strzyzewski, P Strauch, G Juergensen, H
Citation: Vf. Mymrin et al., Advanced model of metal-organic chemical vapor deposition of BaxSr1-xTiO3 oxides, INTEGR FERR, 30(1-4), 2000, pp. 271-280
Evolution of thermoelastic strain and dislocation density during sublimation growth of silicon carbide
Authors: Zhmakin, IA Kulik, AV Karpov, SY Demina, SE Ramm, MS Makarov, YN
Citation: Ia. Zhmakin et al., Evolution of thermoelastic strain and dislocation density during sublimation growth of silicon carbide, DIAM RELAT, 9(3-6), 2000, pp. 446-451
Modeling of gas phase nucleation during silicon carbide chemical vapor deposition
Authors: Vorob'ev, AN Karpov, SY Bord, OV Zhmakin, AI Lovtsus, AA Makarov, YN
Citation: An. Vorob'Ev et al., Modeling of gas phase nucleation during silicon carbide chemical vapor deposition, DIAM RELAT, 9(3-6), 2000, pp. 472-475
Indium segregation kinetics in InGaAs ternary compounds
Authors: Karpov, SY Makarov, YN
Citation: Sy. Karpov et Yn. Makarov, Indium segregation kinetics in InGaAs ternary compounds, THIN SOL FI, 380(1-2), 2000, pp. 71-74
Surface kinetics of GaN evaporation and growth by molecular-beam epitaxy
Authors: Karpov, SY Talalaev, RA Makarov, YN Grandjean, N Massies, J Damilano, B
Citation: Sy. Karpov et al., Surface kinetics of GaN evaporation and growth by molecular-beam epitaxy, SURF SCI, 450(3), 2000, pp. 191-203
On mechanisms of sublimation growth of AlN bulk crystals
Authors: Segal, AS Karpov, SY Makarov, YN Mokhov, EN Roenkov, AD Ramm, MG Vodakov, YA
Citation: As. Segal et al., On mechanisms of sublimation growth of AlN bulk crystals, J CRYST GR, 211(1-4), 2000, pp. 68-72
Effect of gas-phase nucleation on chemical vapor deposition of silicon carbide
Authors: Vorob'ev, AN Karpov, SY Zhmakin, AI Lovtsus, AA Makarov, YN Krishnan, A
Citation: An. Vorob'Ev et al., Effect of gas-phase nucleation on chemical vapor deposition of silicon carbide, J CRYST GR, 211(1-4), 2000, pp. 343-346
Analysis of sublimation growth of bulk SiC crystals in tantalum container
Authors: Karpov, SY Kulik, AV Zhmakin, IA Makarov, YN Mokhov, EN Ramm, MG Ramm, MS Roenkov, AD Vodakov, YA
Citation: Sy. Karpov et al., Analysis of sublimation growth of bulk SiC crystals in tantalum container, J CRYST GR, 211(1-4), 2000, pp. 347-351
Modeling and experimental verification of transport and deposition behavior during MOVPE of Ga1-xInxP in the Planetary Reactor
Authors: Dauelsberg, M Kadinski, L Makarov, YN Bergunde, T Strauch, G Weyers, M
Citation: M. Dauelsberg et al., Modeling and experimental verification of transport and deposition behavior during MOVPE of Ga1-xInxP in the Planetary Reactor, J CRYST GR, 208(1-4), 2000, pp. 85-92
Growth of silicon carbide by sublimation sandwich method in the atmosphereof inert gas
Authors: Segal, AS Vorob'ev, AN Karpov, SY Mokhov, EN Ramm, MG Ramm, MS Roenkov, AD Vodakov, YA Makarov, YN
Citation: As. Segal et al., Growth of silicon carbide by sublimation sandwich method in the atmosphereof inert gas, J CRYST GR, 208(1-4), 2000, pp. 431-441
Transport phenomena in sublimation growth of SiC bulk crystals
Authors: Segal, AS Vorob'ev, AN Karpov, SY Makarov, YN Mokhov, EN Ramm, MG Ramm, MS Roenkov, AD Vodakov, YA Zhmakin, AI
Citation: As. Segal et al., Transport phenomena in sublimation growth of SiC bulk crystals, MAT SCI E B, 61-2, 1999, pp. 40-43
Optimization of sublimation growth of SiC bulk crystals using modeling
Authors: Ramm, MS Mokhov, EN Demina, SE Ramm, MG Roenkov, AD Vodakov, YA Segal, AS Vorob'ev, AN Karpov, SY Kulik, AV Makarov, YN
Citation: Ms. Ramm et al., Optimization of sublimation growth of SiC bulk crystals using modeling, MAT SCI E B, 61-2, 1999, pp. 107-112
High temperature CVD growth of SiC
Authors: Ellison, A Zhang, J Peterson, J Henry, A Wahab, Q Bergman, JP Makarov, YN Vorob'ev, A Vehanen, A Janzen, E
Citation: A. Ellison et al., High temperature CVD growth of SiC, MAT SCI E B, 61-2, 1999, pp. 113-120
Modeling of silicon carbide chemical vapor deposition in a vertical reactor
Authors: Vorob'ev, AN Egorov, YE Makarov, YN Zhmakin, AI Galyukov, AO Rupp, R
Citation: An. Vorob'Ev et al., Modeling of silicon carbide chemical vapor deposition in a vertical reactor, MAT SCI E B, 61-2, 1999, pp. 172-175
Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition
Authors: Vorob'ev, AN Komissarov, AE Segal, AS Makarov, YN Karpov, SY Zhmakin, AI Rupp, R
Citation: An. Vorob'Ev et al., Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition, MAT SCI E B, 61-2, 1999, pp. 176-178
On the possible origins of low indium incorporation during MOVPE of InGaN
Authors: Talalaev, RA Yakovlev, EV Karpov, SY Evstratov, IY Vorobev, AN Makarov, YN
Citation: Ra. Talalaev et al., On the possible origins of low indium incorporation during MOVPE of InGaN, PHYS ST S-A, 176(1), 1999, pp. 253-256
Indium incorporation and droplet formation during InGaN molecular beam epitaxy
Authors: Bord, OV Talalaev, RA Karpov, SY Makarov, YN
Citation: Ov. Bord et al., Indium incorporation and droplet formation during InGaN molecular beam epitaxy, PHYS ST S-A, 176(1), 1999, pp. 297-300
Growth kinetics of GaN in ammonia atmosphere
Authors: Karpov, SY Talalaev, RA Makarov, YN Grandjean, N Massies, J Damilano, B
Citation: Sy. Karpov et al., Growth kinetics of GaN in ammonia atmosphere, PHYS ST S-A, 176(1), 1999, pp. 333-336
Risultati: 1-25 | 26-27