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Citation: Na. Sobolev et al., Light-emitting structures based on single crystal silicon doped with erbium, holmium and ytterbium: structural, electrical and optical properties, IAN FIZ, 64(2), 2000, pp. 258-263

Authors: Davydov, VY Lundin, VV Smirnov, AN Sobolev, NA Usikov, AS Emel'yanov, AM Makoviichuk, MI Parshin, EO

Citation: Vy. Davydov et al., Influence of rapid high-temperature anneals on the photoluminescence of erbium-doped GaN in the wavelength interval 1.0-1.6 mu m, SEMICONDUCT, 33(1), 1999, pp. 1-5

Authors: Sobolev, NA Nikolaev, YA Emelyanov, AM Shtelmakh, KF Yakimenko, AN Trishenkov, MA Khakuashev, PE Makoviichuk, MI Parshin, EO

Citation: Na. Sobolev et al., Single crystal Si : Er : O light-emitting diode structures operating at room temperature, IAN FIZ, 63(2), 1999, pp. 388-391