Authors: Kudryashov, VE Mamakin, SS Turkin, AN Yunovich, AE Kovalev, AN Manyakhin, FI

Citation: Ve. Kudryashov et al., Luminescence spectra and efficiency of GaN-based quantum-well heterostructure light emitting diodes: Current and voltage dependence, SEMICONDUCT, 35(7), 2001, pp. 827-834

Authors: Kudryashov, VE Mamakin, SS Turkin, AN Yunovich, AE Kovalev, AN Manyakhin, FI

Citation: Ve. Kudryashov et al., Dependence of aging on inhomogeneities in InGaN/AlGaN/GaN light-emitting diodes, MRS I J N S, 5, 2000, pp. NIL_574-NIL_579

Authors: Kudryashov, VE Mamakin, SS Yunovich, AE

Citation: Ve. Kudryashov et al., Influence of a sapphire substrate on the emission spectra of gallium nitride light-emitting diodes, TECH PHYS L, 25(7), 1999, pp. 536-537

Authors: Yunovich, AE Kudryashov, VE Mamakin, SS Turkin, AN Kovalev, AN Manyakhin, FI

Citation: Ae. Yunovich et al., Spectra and quantum efficiency of light-emitting diodes based on GaN heterostructures with quantum wells, PHYS ST S-A, 176(1), 1999, pp. 125-130