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Results:
1-7
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Results: 7
Authors:
Manako, S
Ochiai, Y
Yamamoto, H
Teshima, T
Fujita, J
Nomura, E
Citation: S. Manako et al., High-purity, ultrahigh-resolution calixarene electron-beam negative resist, J VAC SCI B, 18(6), 2000, pp. 3424-3427
Authors:
Sakamoto, T
Manako, S
Fujita, J
Ochiai, Y
Baba, T
Yamamoto, H
Teshima, T
Citation: T. Sakamoto et al., Nanometer-scale resolution of a chloromethylated calixarene negative resist in electron-beam lithography: Dependence on the number of phenolic residues, APPL PHYS L, 77(2), 2000, pp. 301-303
Authors:
Yamashita, H
Nomura, E
Manako, S
Kobinata, H
Nakajima, K
Nozue, H
Citation: H. Yamashita et al., Proximity effect correction by the GHOST method using a scattering stencilmask, J VAC SCI B, 17(6), 1999, pp. 2860-2863
Authors:
Ochiai, Y
Manako, S
Fujita, J
Nomura, E
Citation: Y. Ochiai et al., High resolution organic resists for charged particle lithography, J VAC SCI B, 17(3), 1999, pp. 933-938
Authors:
Sone, J
Fujita, J
Ochiai, Y
Manako, S
Matsui, S
Nomura, E
Baba, T
Kawaura, H
Sakamoto, T
Chen, CD
Nakamura, Y
Tsai, JS
Citation: J. Sone et al., Nanofabrication toward sub-10 nm and its application to novel nanodevices, NANOTECHNOL, 10(2), 1999, pp. 135-141
Authors:
Ochiai, Y
Manako, S
Fujita, J
Nomura, E
Citation: Y. Ochiai et al., Nanometer electron beam lithography, NEC RES DEV, 40(4), 1999, pp. 388-392
Authors:
Manako, S
Fujita, J
Tanigaki, K
Ochiai, Y
Nomura, E
Citation: S. Manako et al., Sub-10-nm electron beam lithography using a poly(alpha-methylstyrene) resist with a molecular weight of 650, JPN J A P 1, 37(12B), 1998, pp. 6785-6787
Risultati:
1-7
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