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Citation: K. Eberl et al., Self-assembling quantum dots for optoelectronic devices on Si and GaAs, PHYSICA E, 9(1), 2001, pp. 164-174

Authors: Hayne, M Maes, J Manz, YM Schmidt, OG Eberl, K Moshchalkov, VV

Citation: M. Hayne et al., Electron and hole confinement in stacked self-assembled InP dots of different sizes, PHYS ST S-B, 224(1), 2001, pp. 31-35

Authors: Hayne, M Maes, J Moshchalkov, VV Manz, YM Schmidt, OG Eberl, K

Citation: M. Hayne et al., Magneto-optical study of electron occupation and hole wave functions in stacked self-assembled InP quantum dots, APPL PHYS L, 79(1), 2001, pp. 45-47

Authors: Eberl, K Lipinski, M Manz, YM Jin-Phillipp, NY Winter, W Lange, C Schmidt, OG

Citation: K. Eberl et al., Self-assembling InAs and InP quantum dots for optoelectronic devices, THIN SOL FI, 380(1-2), 2000, pp. 183-188

Authors: Manz, YM Schmidt, OG Eberl, K

Citation: Ym. Manz et al., Room-temperature lasing via ground state of current-injected vertically aligned InP/GaInP quantum dots, APPL PHYS L, 76(23), 2000, pp. 3343-3345