Authors: Pelaz, L Marques, LA Gilmer, GH Jaraiz, M Barbolla, J

Citation: L. Pelaz et al., Atomistic modeling of the effects of dose and implant temperature on dopant diffusion and amorphization in Si, NUCL INST B, 180, 2001, pp. 12-16

Authors: Marques, LA Pelaz, L Hernandez, J Barbolla, J Gilmer, GH

Citation: La. Marques et al., Stability of defects in crystalline silicon and their role in amorphization - art. no. 045214, PHYS REV B, 6404(4), 2001, pp. 5214