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Low interface trap density in rapid thermally annealed Al/SiNx : H/InP metal-insulator-semiconductor devices
Authors:
Redondo, E Blanco, N Martil, I Gonzalez-Diaz, G
Citation:
E. Redondo et al., Low interface trap density in rapid thermally annealed Al/SiNx : H/InP metal-insulator-semiconductor devices, APPL PHYS L, 74(7), 1999, pp. 991-993
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