Authors: Martinez-Criado, G Cros, A Cantarero, A Miskys, CR Ambacher, O Dimitrov, R Stutzmann, M

Citation: G. Martinez-criado et al., Photoluminescence of Ga-face AlGaN/GaN single heterostructures, MAT SCI E B, 82(1-3), 2001, pp. 200-202

Authors: Martinez-Criado, G Cros, A Cantarero, A Ambacher, O Miskys, CR Dimitrov, R Stutzmann, M Smart, J Shealy, JR

Citation: G. Martinez-criado et al., Residual strain effects on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures, J APPL PHYS, 90(9), 2001, pp. 4735-4740

Authors: Martinez-Criado, G Miskys, CR Cros, A Ambacher, O Cantarero, A Stutzmann, M

Citation: G. Martinez-criado et al., Photoluminescence study of excitons in homoepitaxial GaN, J APPL PHYS, 90(11), 2001, pp. 5627-5631

Authors: Martinez-Criado, G Cros, A Cantarero, A Dimitrov, R Ambacher, O Stutzmann, M

Citation: G. Martinez-criado et al., Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition, J APPL PHYS, 88(6), 2000, pp. 3470-3478

Authors: Miskys, CR Kelly, MK Ambacher, O Martinez-Criado, G Stutzmann, M

Citation: Cr. Miskys et al., GaN homoepitaxy by metalorganic chemical-vapor deposition on free-standingGaN substrates, APPL PHYS L, 77(12), 2000, pp. 1858-1860

Authors: Puron, E Martinez-Criado, G Riech, I Almeida-Garcia, J Cantarero, A

Citation: E. Puron et al., Growth and optical characterization of indirect-gap AlxGa1-xAs alloys, J APPL PHYS, 86(1), 1999, pp. 418-424