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Citation: Mm. Rahman et al., Role of short-period superlattice buffers for the growth of Si0.75Ge0.25 alloy layers on Si(001) substrates, APPL SURF S, 175, 2001, pp. 6-11

Authors: Rahman, MM Matada, H Tambo, T Tatsuyama, C

Citation: Mm. Rahman et al., Growth of Si0.75Ge0.25 alloy layers grown on Si(001) substrates using step-graded short-period (Si-m/Ge-n)(N) superlattices, J APPL PHYS, 90(1), 2001, pp. 202-208

Authors: Tatsuyama, C Asano, T Nakao, T Matada, H Tambo, T Ueba, H

Citation: C. Tatsuyama et al., Residual strain and surface roughness of Si1-xGex alloy layers grown by molecular beam epitaxy on Si(001) substrate, THIN SOL FI, 369(1-2), 2000, pp. 161-166

Authors: Asano, T Nakao, T Matada, H Tambo, T Ueba, H Tatsuyama, C

Citation: T. Asano et al., Structural characterization of Si1-xGex alloy layers grown by molecular beam epitaxy on Si(001) substrates, J APPL PHYS, 87(12), 2000, pp. 8759-8765