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Results: 1-8 |

Results: 8

Authors: Mathis, SK Romanov, AE Chen, LF Beltz, GE Pompe, W Speck, JS

Citation: Sk. Mathis et al., Modeling of threading dislocation reduction in growing GaN layers, J CRYST GR, 231(3), 2001, pp. 371-390

Authors: Mathis, SK Lau, KHA Andrews, AM Hall, EM Almuneau, G Hu, EL Speck, JS

Citation: Sk. Mathis et al., Lateral oxidation kinetics of AlAsSb and related alloys lattice matched toInP, J APPL PHYS, 89(4), 2001, pp. 2458-2464

Authors: Mathis, SK Chavarkar, P Andrews, AM Mishra, UK Speck, JS

Citation: Sk. Mathis et al., Strain relaxation of InGaAs by lateral oxidation of AlAs, J VAC SCI B, 18(4), 2000, pp. 2066-2071

Authors: Chavarkar, P Mathis, SK Zhao, L Keller, S Speck, JS Mishra, UK

Citation: P. Chavarkar et al., Strain relaxation in InGaAs lattice engineered substrates, J ELEC MAT, 29(7), 2000, pp. 944-949

Authors: Mathis, SK Romanov, AE Chen, LF Beltz, GE Pompe, W Speck, JS

Citation: Sk. Mathis et al., Modeling of threading dislocation reduction in growing GaN layers, PHYS ST S-A, 179(1), 2000, pp. 125-145

Authors: Mathis, SK Chavarkar, P Andrews, AM Mishra, UK Speck, JS

Citation: Sk. Mathis et al., Reactive removal of misfit dislocations from InGaAs on GaAs by lateral oxidation, APPL PHYS L, 77(6), 2000, pp. 845-847

Authors: Chavarkar, P Mishra, UK Mathis, SK Speck, JS

Citation: P. Chavarkar et al., Effect of Sb composition on lateral oxidation rates in AlAs1-xSbx, APPL PHYS L, 76(10), 2000, pp. 1291-1293

Authors: Mathis, SK Wu, XH Romanov, AE Speck, JS

Citation: Sk. Mathis et al., Threading dislocation reduction mechanisms in low-temperature-grown GaAs, J APPL PHYS, 86(9), 1999, pp. 4836-4842

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