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Authors: Chindalore, G Shih, WK Jallepalli, S Hareland, SA Tasch, AF Maziar, CM
Citation: G. Chindalore et al., An experimental study of the effect of quantization on the effective electrical oxide thickness in MOS electron and hole accumulation layers in heavily doped Si, IEEE DEVICE, 47(3), 2000, pp. 643-646

Authors: Mudanai, S Chindalore, GL Shih, WK Wang, H Ouyang, Q Tasch, AF Maziar, CM Banerjee, SK
Citation: S. Mudanai et al., Models for electron and hole mobilities in MOS accumulation layers, IEEE DEVICE, 46(8), 1999, pp. 1749-1759

Authors: Chindalore, G Mudanai, S Shih, WK Tasch, AF Maziar, CM
Citation: G. Chindalore et al., Temperature dependence characterization of effective electron and hole mobilities in the accumulation layers of N- and P-type MOSFET's, IEEE DEVICE, 46(6), 1999, pp. 1290-1294
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