Authors: Vuong, HH Bude, J Baumann, FH Evans-Lutterodt, K Ning, J Ma, Y Mcmacken, J Gossmann, HJ Silverman, P Rafferty, CS Hillenius, SJ

Citation: Hh. Vuong et al., Effect of implant damage on the gate oxide thickness, SOL ST ELEC, 43(5), 1999, pp. 985-988