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Results: 1-9 |
Results: 9
Determination of the capture cross sections of electrons in undoped hydrogenated amorphous silicon from the photoconductivity of and space-charge relaxation in n(+)-i-n(+) structures; the role of light exposure and annealing
Authors: Meaudre, M Meaudre, R
Citation: M. Meaudre et R. Meaudre, Determination of the capture cross sections of electrons in undoped hydrogenated amorphous silicon from the photoconductivity of and space-charge relaxation in n(+)-i-n(+) structures; the role of light exposure and annealing, J PHYS-COND, 13(24), 2001, pp. 5663-5673
Electronic properties of Erbium doped amorphous silicon
Authors: Kleider, JP Longeaud, C Meaudre, R Meaudre, M Vignoli, S Koughia, KV Terukov, EI
Citation: Jp. Kleider et al., Electronic properties of Erbium doped amorphous silicon, MAT SCI E B, 81(1-3), 2001, pp. 71-73
Thermoelectric power in undoped hydrogenated polymorphous silicon
Authors: Meaudre, R Meaudre, M Butte, R Vignoli, S
Citation: R. Meaudre et al., Thermoelectric power in undoped hydrogenated polymorphous silicon, THIN SOL FI, 366(1-2), 2000, pp. 207-210
Structural, optical and electronic properties of hydrogenated polymorphoussilicon films deposited at 150 degrees C
Authors: Butte, R Vignoli, S Meaudre, M Meaudre, R Marty, O Saviot, L Cabarrocas, PRI
Citation: R. Butte et al., Structural, optical and electronic properties of hydrogenated polymorphoussilicon films deposited at 150 degrees C, J NON-CRYST, 266, 2000, pp. 263-268
Some electronic and metastability properties of a new nanostructured material: hydrogenated polymorphous silicon
Authors: Butte, R Meaudre, R Meaudre, M Vignoli, S Longeaud, C Kleider, JP Cabarrocas, PRI
Citation: R. Butte et al., Some electronic and metastability properties of a new nanostructured material: hydrogenated polymorphous silicon, PHIL MAG B, 79(7), 1999, pp. 1079-1095
Structural properties depicted by optical measurements in hydrogenated polymorphous silicon
Authors: Vignoli, S Butte, R Meaudre, R Meaudre, M Cabarrocas, PRI
Citation: S. Vignoli et al., Structural properties depicted by optical measurements in hydrogenated polymorphous silicon, J PHYS-COND, 11(44), 1999, pp. 8749-8757
Determination of the midgap density of states and capture cross-sections in polymorphous silicon by space-charge-limited conductivity and relaxation
Authors: Meaudre, R Meaudre, M Butte, R Vignoli, S
Citation: R. Meaudre et al., Determination of the midgap density of states and capture cross-sections in polymorphous silicon by space-charge-limited conductivity and relaxation, PHIL MAG L, 79(9), 1999, pp. 763-769
Midgap density of states in hydrogenated polymorphous silicon
Authors: Meaudre, M Meaudre, R Butte, R Vignoli, S Longeaud, C Kleider, JP Cabarrocas, PRI
Citation: M. Meaudre et al., Midgap density of states in hydrogenated polymorphous silicon, J APPL PHYS, 86(2), 1999, pp. 946-950
Very low densities of localized states at the Fermi level in hydrogenated polymorphous silicon from capacitance and space-charge-limited current measurements
Authors: Kleider, JP Longeaud, C Gauthier, M Meaudre, M Meaudre, R Butte, R Vignoli, S Cabarrocas, PRI
Citation: Jp. Kleider et al., Very low densities of localized states at the Fermi level in hydrogenated polymorphous silicon from capacitance and space-charge-limited current measurements, APPL PHYS L, 75(21), 1999, pp. 3351-3353
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