Authors: Waltereit, P Brandt, O Ramsteiner, M Trampert, A Grahn, HT Menniger, J Reiche, M Ploog, KH

Citation: P. Waltereit et al., M-plane GaN(1(1)over-bar-00) grown on gamma-LiAlO2(100): nitride semiconductors free of internal electrostatic fields, J CRYST GR, 227, 2001, pp. 437-441

Authors: Waltereit, P Brandt, O Ramsteiner, M Trampert, A Grahn, HT Menniger, J Reiche, M Uecker, R Reiche, P Ploog, KH

Citation: P. Waltereit et al., Growth of M-plane GaN(1(1)over-bar-00): A way to evade electrical polarization in nitrides, PHYS ST S-A, 180(1), 2000, pp. 133-138

Authors: Waltereit, P Brandt, O Trampert, A Grahn, HT Menniger, J Ramsteiner, M Reiche, M Ploog, KH

Citation: P. Waltereit et al., Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes, NATURE, 406(6798), 2000, pp. 865-868