Authors: Mesli, A Schroter, W Weber, J

Citation: A. Mesli et al., Containing Papers Presented at the European Materials Research Society 1999 Spring Meeting, Symposium F: Process Induced Defects in Semiconductors, June 1-4, 1999, Strasbourg, France - Preface, MAT SCI E B, 71, 2000, pp. IX-IX

Authors: Fage-Pedersen, J Larsen, AN Mesli, A

Citation: J. Fage-pedersen et al., Irradiation-induced defects in Ge studied by transient spectroscopies, PHYS REV B, 62(15), 2000, pp. 10116-10125

Authors: Weber, J Mesli, A

Citation: J. Weber et A. Mesli, Containing papers presented at the European Materials Research Society 1998 Spring Meeting, Symposium A: Defects in Silicon: Hydrogen, June 16-19, 1998, strasbourg, France - Preface, MAT SCI E B, 58(1-2), 1999, pp. VII-VII

Authors: Mesli, A Larsen, AN

Citation: A. Mesli et An. Larsen, Vacancy in relaxed p-type Si1-xGex alloys: Evidence for strong disorder induced relaxation, PHYS REV L, 83(1), 1999, pp. 148-151

Authors: Pedersen, TPL Larsen, AN Mesli, A

Citation: Tpl. Pedersen et al., Carbon-related defects in proton-irradiated, n-type epitaxial Si1-xGex, APPL PHYS L, 75(26), 1999, pp. 4085-4087

Authors: Grenier, B Verchere, E Mesli, A Dubreuil, M Siao, D Vandendriessche, M Cales, J Maurette, P

Citation: B. Grenier et al., Capnography monitoring during neurosurgery: Reliability in relation to various intraoperative positions, ANESTH ANAL, 88(1), 1999, pp. 43-48