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Results:
1-14
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Results: 14
Authors:
Mohammad, SN
Citation: Sn. Mohammad, Trap-assisted recombination in semiconductors: application to group III gallium nitride material and junctions, PHIL MAG B, 81(6), 2001, pp. 591-612
Authors:
Mohammad, SN
Fan, ZF
Botchkarev, AE
Kim, W
Aktas, O
Morkoc, H
Shiwei, F
Jones, KA
Derenge, MA
Citation: Sn. Mohammad et al., Physical mechanisms underlying anomalous capacitance characteristics of platinum-gallium nitride Schottky diodes, PHIL MAG B, 81(5), 2001, pp. 453-460
Authors:
Motayed, A
Mohammad, SN
Citation: A. Motayed et Sn. Mohammad, Latchup resistant Ge1-xSix/Si heterostructure CMOS design for VLSI application, SOL ST ELEC, 45(2), 2001, pp. 287-291
Authors:
Motayed, A
Browne, TE
Onuorah, AI
Mohammad, SN
Citation: A. Motayed et al., Experimental studies of frequency response and related properties of small-signal bipolar junction transistor amplifiers, SOL ST ELEC, 45(2), 2001, pp. 325-333
Authors:
Motayed, A
Mohammad, SN
Citation: A. Motayed et Sn. Mohammad, Tuned performance of small-signal BJT Darlington pair, SOL ST ELEC, 45(2), 2001, pp. 369-371
Authors:
Vernon, E
Bryson, D
Orr, ES
Mohammad, SN
Citation: E. Vernon et al., Role of supply voltage and load capacitors in the experimental operation of small-signal MOSFET amplifiers, SOL ST ELEC, 45(12), 2001, pp. 2033-2038
Authors:
Mah, MY
Mohammad, SN
Carter, RL
Citation: My. Mah et al., Surface recombination in ion-implanted MOSFETs, SOL ST ELEC, 45(12), 2001, pp. 2039-2043
Authors:
Fahmi, MME
El Ahl, AMHS
Mohammad, SN
Citation: Mme. Fahmi et al., Implication of non-ideality of coupling capacitors in the performance of multistage amplifiers, SOL ST ELEC, 45(10), 2001, pp. 1843-1845
Authors:
Vernon, E
Bryson, D
Motayed, A
Mohammad, SN
Citation: E. Vernon et al., Experimental investigation of factors influencing design of small-signal CMOS amplifiers, SOL ST ELEC, 45(1), 2001, pp. 63-69
Authors:
He, MQ
Zhou, PZ
Mohammad, SN
Harris, GL
Halpern, JB
Jacobs, R
Sarney, WL
Salamanca-Riba, L
Citation: Mq. He et al., Growth of GaN nanowires by direct reaction of Ga with NH3, J CRYST GR, 231(3), 2001, pp. 357-365
Authors:
Wang, DF
Feng, SW
Lu, C
Motayed, A
Jah, M
Mohammad, SN
Jones, KA
Salamanca-Riba, L
Citation: Df. Wang et al., Low-resistance Ti/Al/Ti/Au multilayer ohmic contact to n-GaN, J APPL PHYS, 89(11), 2001, pp. 6214-6217
Authors:
Browne, TE
Onuorah, AI
Motayed, A
Mohammad, SN
Citation: Te. Browne et al., Fundamental investigation of the comparative behaviour of small-signal BJTDarlington and cascode amplifiers, INT J ELECT, 88(7), 2001, pp. 737-749
Authors:
Rumyantsev, S
Levinshtein, M
Jackson, AD
Mohammad, SN
Harris, GL
Spencer, MG
Shur, M
Citation: S. Rumyantsev et al., Boron nitride (BN), PROPERTIES OF ADVANCED SEMICONDUCTOR MATERIALS: GAN, AIN, INN, BN, SIC, SIGE, 2001, pp. 67-92
Authors:
Brewis, IA
Morton, IE
Mohammad, SN
Browes, CE
Moore, HDM
Citation: Ia. Brewis et al., Measurement of intracellular calcium concentration and plasma membrane potential in human spermatozoa using flow cytometry, J ANDROLOGY, 21(2), 2000, pp. 238-249
Risultati:
1-14
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