Authors:
Suemune, I
Morooka, N
Uesugi, K
Ok, YW
Seong, TY
Citation: I. Suemune et al., Formation of wire-like surfaces and lateral composition modulation in GaAsN grown by metalorganic molecular-beam epitaxy, J CRYST GR, 221, 2000, pp. 546-550
Citation: N. Morooka et al., Role of indium on nitrogen incorporation in GaNAs grown by metalorganic molecular-beam epitaxy, JPN J A P 2, 38(11B), 1999, pp. L1309-L1311
Citation: K. Uesugi et al., Strain effect on the N composition dependence of GaNAs bandgap energy grown on (001) GaAs by metalorganic molecular beam epitaxy, J CRYST GR, 202, 1999, pp. 355-358
Citation: K. Uesugi et al., Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements, APPL PHYS L, 74(9), 1999, pp. 1254-1256