Authors: Motayed, A Mohammad, SN

Citation: A. Motayed et Sn. Mohammad, Latchup resistant Ge1-xSix/Si heterostructure CMOS design for VLSI application, SOL ST ELEC, 45(2), 2001, pp. 287-291

Authors: Motayed, A Browne, TE Onuorah, AI Mohammad, SN

Citation: A. Motayed et al., Experimental studies of frequency response and related properties of small-signal bipolar junction transistor amplifiers, SOL ST ELEC, 45(2), 2001, pp. 325-333

Authors: Motayed, A Mohammad, SN

Citation: A. Motayed et Sn. Mohammad, Tuned performance of small-signal BJT Darlington pair, SOL ST ELEC, 45(2), 2001, pp. 369-371

Authors: Vernon, E Bryson, D Motayed, A Mohammad, SN

Citation: E. Vernon et al., Experimental investigation of factors influencing design of small-signal CMOS amplifiers, SOL ST ELEC, 45(1), 2001, pp. 63-69

Authors: Wang, DF Feng, SW Lu, C Motayed, A Jah, M Mohammad, SN Jones, KA Salamanca-Riba, L

Citation: Df. Wang et al., Low-resistance Ti/Al/Ti/Au multilayer ohmic contact to n-GaN, J APPL PHYS, 89(11), 2001, pp. 6214-6217

Authors: Browne, TE Onuorah, AI Motayed, A Mohammad, SN

Citation: Te. Browne et al., Fundamental investigation of the comparative behaviour of small-signal BJTDarlington and cascode amplifiers, INT J ELECT, 88(7), 2001, pp. 737-749