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Results: 1-18 |
Results: 18
Evolution of the interfacial electronic structure during thermal oxidation
Authors: Muller, DA Neaton, JB
Citation: Da. Muller et Jb. Neaton, Evolution of the interfacial electronic structure during thermal oxidation, SPR S MAT S, 46, 2001, pp. 219-246
Simulation of thermal diffuse scattering including a detailed phonon dispersion curve
Authors: Muller, DA Edwards, B Kirkland, EJ Silcox, J
Citation: Da. Muller et al., Simulation of thermal diffuse scattering including a detailed phonon dispersion curve, ULTRAMICROS, 86(3-4), 2001, pp. 371-380
Optimizing the environment for sub-0.2 nm scanning transmission electron microscopy
Authors: Muller, DA Grazul, J
Citation: Da. Muller et J. Grazul, Optimizing the environment for sub-0.2 nm scanning transmission electron microscopy, J ELEC MICR, 50(3), 2001, pp. 219-226
Properties of high kappa gate dielectrics Gd2O3 and Y2O3 for Si
Authors: Kwo, J Hong, M Kortan, AR Queeney, KL Chabal, YJ Opila, RL Muller, DA Chu, SNG Sapjeta, BJ Lay, TS Mannaerts, JP Boone, T Krautter, HW Krajewski, JJ Sergnt, AM Rosamilia, JM
Citation: J. Kwo et al., Properties of high kappa gate dielectrics Gd2O3 and Y2O3 for Si, J APPL PHYS, 89(7), 2001, pp. 3920-3927
Effect of oxygen stoichiometry on the electrical properties of zirconia gate dielectrics
Authors: Ramanathan, S Muller, DA Wilk, GD Park, CM McIntyre, PC
Citation: S. Ramanathan et al., Effect of oxygen stoichiometry on the electrical properties of zirconia gate dielectrics, APPL PHYS L, 79(20), 2001, pp. 3311-3313
Growth and characterization of ultrathin zirconia dielectrics grown by ultraviolet ozone oxidation
Authors: Ramanathan, S Wilk, GD Muller, DA Park, CM McIntyre, PC
Citation: S. Ramanathan et al., Growth and characterization of ultrathin zirconia dielectrics grown by ultraviolet ozone oxidation, APPL PHYS L, 79(16), 2001, pp. 2621-2623
Doping by metal-mediated epitaxy: Growth of As delta-doped Si through a Pbmonolayer
Authors: Dubon, OD Evans, PG Chervinsky, JF Aziz, MJ Spaepen, F Golovchenko, JA Chisholm, MF Muller, DA
Citation: Od. Dubon et al., Doping by metal-mediated epitaxy: Growth of As delta-doped Si through a Pbmonolayer, APPL PHYS L, 78(11), 2001, pp. 1505-1507
Prospective risk of morbidity in relation to multiplicity of infection with Plasmodium falciparum in Sao Tome
Authors: Muller, DA Charlwood, JD Felger, I Ferreira, C do Rosario, V Smith, T
Citation: Da. Muller et al., Prospective risk of morbidity in relation to multiplicity of infection with Plasmodium falciparum in Sao Tome, ACT TROP, 78(2), 2001, pp. 155-162
Electronic properties of the Si/SiO2 interface from first principles
Authors: Neaton, JB Muller, DA Ashcroft, NW
Citation: Jb. Neaton et al., Electronic properties of the Si/SiO2 interface from first principles, PHYS REV L, 85(6), 2000, pp. 1298-1301
First principles simulation of a ceramic/metal interface with misfit
Authors: Benedek, R Alavi, A Seidman, DN Yang, LH Muller, DA Woodward, C
Citation: R. Benedek et al., First principles simulation of a ceramic/metal interface with misfit, PHYS REV L, 84(15), 2000, pp. 3362-3365
Atomic-scale structure and chemistry of ceramic/metal interfaces - II. Solute segregation at MgO/Cu (Ag) and CdO/Ag (Au) interfaces
Authors: Shashkov, DA Muller, DA Seidman, DN
Citation: Da. Shashkov et al., Atomic-scale structure and chemistry of ceramic/metal interfaces - II. Solute segregation at MgO/Cu (Ag) and CdO/Ag (Au) interfaces, ACT MATER, 47(15-16), 1999, pp. 3953-3963
Electron microscopy: probing the atomic structure and chemistry of grain boundaries, interfaces and defects
Authors: Muller, DA Mills, MJ
Citation: Da. Muller et Mj. Mills, Electron microscopy: probing the atomic structure and chemistry of grain boundaries, interfaces and defects, MAT SCI E A, 260(1-2), 1999, pp. 12-28
Why changes in bond lengths and cohesion lead to core-level shifts in metals, and consequences for the spatial difference method
Authors: Muller, DA
Citation: Da. Muller, Why changes in bond lengths and cohesion lead to core-level shifts in metals, and consequences for the spatial difference method, ULTRAMICROS, 78(1-4), 1999, pp. 163-174
Understanding the limits of ultrathin SiO2 and Si-O-N gate dielectrics forsub50 nm CMOS
Authors: Green, ML Sorsch, TW Timp, GL Muller, DA Weir, BE Silverman, PJ Moccio, SV Kim, YO
Citation: Ml. Green et al., Understanding the limits of ultrathin SiO2 and Si-O-N gate dielectrics forsub50 nm CMOS, MICROEL ENG, 48(1-4), 1999, pp. 25-30
The end of the roadmap for silicon dioxide: The electronic structure of hyper-thin gate oxides at the atomic scale
Authors: Muller, DA Sorsch, T Moccio, S Baumann, FH Kawasaki, M Timp, G
Citation: Da. Muller et al., The end of the roadmap for silicon dioxide: The electronic structure of hyper-thin gate oxides at the atomic scale, SCANNING, 21(2), 1999, pp. 94-94
Geometric frustration of 2D dopants in silicon: Surpassing electrical saturation
Authors: Citrin, PH Muller, DA Gossmann, HJ Vanfleet, R Northrup, PA
Citation: Ph. Citrin et al., Geometric frustration of 2D dopants in silicon: Surpassing electrical saturation, PHYS REV L, 83(16), 1999, pp. 3234-3237
The electronic structure at the atomic scale of ultrathin gate oxides
Authors: Muller, DA Sorsch, T Moccio, S Baumann, FH Evans-Lutterodt, K Timp, G
Citation: Da. Muller et al., The electronic structure at the atomic scale of ultrathin gate oxides, NATURE, 399(6738), 1999, pp. 758-761
Electron scattering and transmission through SCALPEL masks
Authors: Mkrtchyan, MM Liddle, JA Novembre, AE Waskiewicz, WK Watson, GP Harriott, LR Muller, DA
Citation: Mm. Mkrtchyan et al., Electron scattering and transmission through SCALPEL masks, J VAC SCI B, 16(6), 1998, pp. 3385-3391
Risultati: 1-18 |