Authors:
Chichibu, SF
Wada, K
Mullhauser, J
Brandt, O
Ploog, KH
Mizutani, T
Setoguchi, A
Nakai, R
Sugiyama, M
Nakanishi, H
Torii, K
Deguchi, T
Sota, T
Nakamura, S
Citation: Sf. Chichibu et al., Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes (vol 76, pg 1671, 2000), APPL PHYS L, 78(5), 2001, pp. 679-679
Authors:
Chichibui, SF
Setoguchi, A
Azuhata, T
Mullhauser, J
Sugiyama, M
Mizutani, T
Deguchi, T
Nakanishi, H
Sota, T
Brandt, O
Ploog, KH
Mukai, T
Nakamura, S
Citation: Sf. Chichibui et al., Effective localization of quantum well excitons in InGaN quantum well structures with high InN mole fraction, PHYS ST S-A, 180(1), 2000, pp. 321-325
Authors:
Chichibu, SF
Wada, K
Mullhauser, J
Brandt, O
Ploog, KH
Mizutani, T
Setoguchi, A
Nakai, R
Sugiyama, M
Nakanishi, H
Korii, K
Deguchi, T
Sota, T
Nakamura, S
Citation: Sf. Chichibu et al., Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes, APPL PHYS L, 76(13), 2000, pp. 1671-1673