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Results:
1-9
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Results: 9
Authors:
Lim, JW
Mun, JK
An, SJ
Nam, S
Kwak, MH
Kim, H
Lee, JJ
Citation: Jw. Lim et al., PdGe-based ohmic contact on n-GaAs with highly and poorly doped layers, JPN J A P 1, 39(5A), 2000, pp. 2546-2549
Authors:
Lim, JW
Mun, JK
Nam, S
Kwak, MH
Kim, H
Song, MK
Ma, DS
Citation: Jw. Lim et al., PdGe-based ohmic contacts to high-low doped n-GaAs with and without undoped cap layer, J PHYS D, 33(13), 2000, pp. 1611-1614
Authors:
Lim, JW
Mun, JK
Lee, JJ
Citation: Jw. Lim et al., Ohmic contact formation mechanism of the PdGe-based system on n-type GaAs, J KOR PHYS, 34(3), 1999, pp. 275-279
Authors:
Lim, JW
Mun, JK
Lee, JJ
Citation: Jw. Lim et al., Investigation of the properties of Pd/Ge/Au/Pd/Au ohmic contacts to n-GaAsformed with different ambients, APPL SURF S, 148(1-2), 1999, pp. 34-41
Authors:
Lim, JW
Mun, JK
Kwak, MH
Lee, JJ
Citation: Jw. Lim et al., Performance of Pd/Ge/Au/Pd/Au ohmic contacts and its application to GaAs metal-semiconductor field-effect transistors, SOL ST ELEC, 43(10), 1999, pp. 1893-1900
Authors:
Mun, JK
Lim, JW
Lee, JJ
Yang, JW
Citation: Jk. Mun et al., Degradation of d.c. parameters in enhancement mode WNx self-aligned gate GaAs MESFETs under high temperature stress, MICROEL REL, 39(12), 1999, pp. 1793-1800
Authors:
Mun, JK
Kim, CH
Lee, JJ
Pyun, KE
Citation: Jk. Mun et al., Failure analysis for RF characteristics of GaAs MESFETs, MICROEL REL, 39(1), 1999, pp. 69-75
Authors:
Youn, KJ
Mun, JK
Kim, MG
Oh, EK
Lee, CS
Lee, JJ
Pyun, KE
Park, HM
Citation: Kj. Youn et al., A 3.0 V front-end GaAs receiver MMIC for the CDMA/AMPS dual mode cellular phones, J KOR PHYS, 33, 1998, pp. S333-S337
Authors:
Kim, MG
Mun, JK
Lee, JJ
Pyun, KE
Yang, JW
Lee, CS
Citation: Mg. Kim et al., A 3 V GaAs MESFET monolithic transmitter for digital/analog dual-mode hand-held phones, J KOR PHYS, 33, 1998, pp. S346-S349
Risultati:
1-9
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