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Results: 1-10 |
Results: 10
A novel in-situ SOI characterization technique: The intrinsic point-probe MOSFET
Authors: Ionescu, AM Munteanu, D
Citation: Am. Ionescu et D. Munteanu, A novel in-situ SOI characterization technique: The intrinsic point-probe MOSFET, IEEE ELEC D, 22(4), 2001, pp. 166-169
Characterization of silicon-on-sapphire material and devices for radio frequency applications
Authors: Munteanu, D Cristoloveanu, S Rozeau, O Jomaah, J Boussey, J Wetzel, M de la Houssaye, P Lagnado, I
Citation: D. Munteanu et al., Characterization of silicon-on-sapphire material and devices for radio frequency applications, J ELCHEM SO, 148(4), 2001, pp. G218-G224
Polyurethane-bound stabilisers
Authors: Munteanu, D Bolcu, C Ostafe, V
Citation: D. Munteanu et al., Polyurethane-bound stabilisers, POLYM POL C, 8(2), 2000, pp. 87-100
Aspects of the tempering transformation kinetics of Cr low alloyed steels
Authors: Munteanu, A Munteanu, D
Citation: A. Munteanu et D. Munteanu, Aspects of the tempering transformation kinetics of Cr low alloyed steels, HIGH TEMP M, 19(2), 2000, pp. 127-133
A review of the pseudo-MOS transistor in SOI wafers: Operation, parameter extraction, and applications
Authors: Cristoloveanu, S Munteanu, D Liu, MST
Citation: S. Cristoloveanu et al., A review of the pseudo-MOS transistor in SOI wafers: Operation, parameter extraction, and applications, IEEE DEVICE, 47(5), 2000, pp. 1018-1027
Circular pseudo-metal oxide semiconductor field effect transistor in silicon-on-insulator - Analytical model, simulation, and measurements
Authors: Munteanu, D Cristoloveanu, S Hovel, H
Citation: D. Munteanu et al., Circular pseudo-metal oxide semiconductor field effect transistor in silicon-on-insulator - Analytical model, simulation, and measurements, EL SOLID ST, 2(5), 1999, pp. 242-243
Investigation of SOI MOSFETs with ultimate thickness
Authors: Ernst, T Munteanu, D Cristoloveanu, S Ouisse, T Horiguchi, S Ono, Y Takahashi, Y Murase, K
Citation: T. Ernst et al., Investigation of SOI MOSFETs with ultimate thickness, MICROEL ENG, 48(1-4), 1999, pp. 339-342
Model for the extraction of the recombination lifetime in partially depleted SOI MOSFETs
Authors: Munteanu, D Cristoloveanu, S
Citation: D. Munteanu et S. Cristoloveanu, Model for the extraction of the recombination lifetime in partially depleted SOI MOSFETs, MICROEL ENG, 48(1-4), 1999, pp. 355-358
Numerical simulation of the pseudo-MOSFET characterization technique
Authors: Munteanu, D Cristoloveanu, S Guichard, E
Citation: D. Munteanu et al., Numerical simulation of the pseudo-MOSFET characterization technique, SOL ST ELEC, 43(3), 1999, pp. 547-554
Black America: Present status of linguistic studies on Hispanic, Portuguese and Creole variants
Authors: Munteanu, D
Citation: D. Munteanu, Black America: Present status of linguistic studies on Hispanic, Portuguese and Creole variants, REV FILOL E, 78(3-4), 1998, pp. 407-411
Risultati: 1-10 |