Authors: Zhuravlev, KS Toropov, AI Shamirzaev, TS Bazarov, AK Rakov, YN Myakishev, YB

Citation: Ks. Zhuravlev et al., Use of high-purity AlxGa1-xAs layers in epitaxial structures for high-power microwave field-effect transistors, TECH PHYS L, 25(8), 1999, pp. 595-597