Authors: NANIWAE K IWATA H YASHIKI K

Citation: K. Naniwae et al., EPITAXIAL-GROWTH OF N-TYPE AND P-TYPE ZNCDSE ON INP, Journal of crystal growth, 185, 1998, pp. 450-454

Authors: NANIWAE K IWATA H KURODA N YASHIKI K KURAMOTO M SUZUKI T

Citation: K. Naniwae et al., MBE GROWTH OF ZNCDSE AND MGZNCDSE ALLOYS ON INP SUBSTRATES WITH A GAINAS BUFFER-LAYER, Journal of crystal growth, 159(1-4), 1996, pp. 36-40

Authors: NANIWAE K SUGOU S ANAN T

Citation: K. Naniwae et al., EFFECT OF STRAIN COMPENSATION ON CRYSTALLINE QUALITY FOR INGAAS INALPSTRAINED MULTIPLE-QUANTUM-WELL STRUCTURES ON INP GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY/, JPN J A P 2, 33(2A), 1994, pp. 120000156-120000158

Authors: KIMURA A NIDO M MURATA S SHIMIZU J NANIWAE K SUZUKI A

Citation: A. Kimura et al., STRAIN DEPENDENCE OF THE LINEWIDTH ENHANCEMENT FACTOR IN LONG-WAVELENGTH TENSILE-STRAINED AND COMPRESSIVE-STRAINED QUANTUM-WELL LASERS, IEEE photonics technology letters, 5(9), 1993, pp. 983-986

Authors: NIDO M NANIWAE K TERAKADO T SUZUKI A

Citation: M. Nido et al., BAND-GAP DISCONTINUITY CONTROL FOR INGAAS INGAASP MULTI-QUANTUM-WELL STRUCTURES BY TENSILE-STRAINED BARRIERS/, Applied physics letters, 62(21), 1993, pp. 2716-2718