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Results:
1-9
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Results: 9
Authors:
YAN Z
NARITSUKA S
NISHINAGA T
Citation: Z. Yan et al., STEP SOURCES IN MICROCHANNEL EPITAXY OF INP, Journal of crystal growth, 192(1-2), 1998, pp. 11-17
Authors:
CHANG YS
NARITSUKA S
NISHINAGA T
Citation: Ys. Chang et al., OPTIMIZATION OF GROWTH CONDITION FOR WIDE DISLOCATION-FREE GAAS ON SISUBSTRATE BY MICROCHANNEL EPITAXY, Journal of crystal growth, 192(1-2), 1998, pp. 18-22
Authors:
NARITSUKA S
NISHINAGA T
Citation: S. Naritsuka et T. Nishinaga, SPATIALLY-RESOLVED PHOTOLUMINESCENCE OF LATERALLY OVERGROWN INP ON INP-COATED SI SUBSTRATES, Journal of crystal growth, 174(1-4), 1997, pp. 622-629
Authors:
CHANG YS
NARITSUKA S
NISHINAGA T
Citation: Ys. Chang et al., EFFECT OF GROWTH TEMPERATURE ON EPITAXIAL LATERAL OVERGROWTH OF GAAS ON SI SUBSTRATE, Journal of crystal growth, 174(1-4), 1997, pp. 630-634
Authors:
MATSUNAGA Y
NARITSUKA S
NISHINAGA T
Citation: Y. Matsunaga et al., CRYSTALLIZATION PROCESS OF AMORPHOUS GAAS BUFFER LAYERS FOR THE HETEROEPITAXIAL GROWTH OF GAAS ON SI(001) SUBSTRATES, Journal of crystal growth, 174(1-4), 1997, pp. 635-640
Authors:
NARITSUKA S
NISHINAGA T
TACHIKAWA M
MORI H
Citation: S. Naritsuka et al., INP LAYER GROWN ON (001)SILICON SUBSTRATE BY EPITAXIAL LATERAL OVERGROWTH, JPN J A P 2, 34(11A), 1995, pp. 1432-1435
Authors:
NARITSUKA S
NISHINAGA T
Citation: S. Naritsuka et T. Nishinaga, EPITAXIAL LATERAL OVERGROWTH OF INP BY LIQUID-PHASE EPITAXY, Journal of crystal growth, 146(1-4), 1995, pp. 314-318
Authors:
NARITSUKA S
NODA T
WAGAI A
FUJITA S
ASHIZAWA Y
Citation: S. Naritsuka et al., INFLUENCE OF V III MOLAR RATIO ON DEEP TRAPS IN METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWN INALAS LAYERS/, JPN J A P 2, 32(7A), 1993, pp. 925-927
Authors:
NARITSUKA S
NODA T
WAGAI A
FUJITA S
ASHIZAWA Y
Citation: S. Naritsuka et al., ELECTRICAL-PROPERTIES AND DEEP LEVELS OF INALAS LAYERS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of crystal growth, 131(1-2), 1993, pp. 186-192
Risultati:
1-9
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