Citation: Ss. Neogi et al., FACTORS AFFECTING 2-DIMENSIONAL DOPANT PROFILES OBTAINED BY TRANSMISSION ELECTRON-MICROSCOPY OF ETCHED P-N-JUNCTIONS IN SI, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(1), 1998, pp. 471-475
Authors:
NEOGI SS
VENABLES D
MA ZY
MAHER DM
TAYLOR M
CORCORAN S
Citation: Ss. Neogi et al., MAPPING 2-DIMENSIONAL ARSENIC DISTRIBUTIONS IN SILICON USING DOPANT-SELECTIVE CHEMICAL ETCHING TECHNIQUE, Journal of applied physics, 82(11), 1997, pp. 5811-5815