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Results:
1-19
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Results: 19
Authors:
NAWAZ M
HABIBI S
ZHENG HQ
RADHAKRISHNAN K
LEE KY
NG GI
Citation: M. Nawaz et al., DESIGN AND CHARACTERIZATION OF ALGAAS INGAAS/GAAS-BASED DOUBLE-HETEROJUNCTION PHEMT DEVICE/, Microwave and optical technology letters, 17(1), 1998, pp. 50-53
Authors:
NAWAZ M
NG GI
Citation: M. Nawaz et Gi. Ng, A NEW CAD ORIENTED CHARGE CONSERVING CAPACITANCE MODEL FOR HEMTS, Microelectronic engineering, 43-4, 1998, pp. 619-626
Authors:
YOON SF
ZHENG HQ
ZHANG PH
MAH KW
NG GI
Citation: Sf. Yoon et al., ELECTRICAL AND OPTICAL-PROPERTIES OF INP GROWN BY MOLECULAR-BEAM EPITAXY USING A VALVED PHOSPHORUS CRACKER CELL, Thin solid films, 326(1-2), 1998, pp. 233-237
Authors:
WANG H
NG GI
HOPGOOD AA
Citation: H. Wang et al., KINETICS OF NON-RADIATIVE-DEFECT-RELATED DEGRADATION IN GAAS ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of physics. D, Applied physics (Print), 31(21), 1998, pp. 3168-3171
Authors:
LU W
LEE JH
PRASAD K
NG GI
LINDSTROM P
Citation: W. Lu et al., NONDESTRUCTIVE DETERMINATION OF SHEET CARRIER DENSITY IN PSEUDOMORPHIC ALGAAS INGAAS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTOR STRUCTURES BY ROOM-TEMPERATURE PHOTOLUMINESCENCE SPECTRA/, Journal of physics. D, Applied physics, 31(2), 1998, pp. 159-164
Authors:
YOON SF
ZHANG PH
ZHENG HQ
RADHAKRISHNAN K
NG GI
Citation: Sf. Yoon et al., THE EFFECTS OF BERYLLIUM DOPING IN INGAALAS LAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Journal of crystal growth, 193(3), 1998, pp. 285-292
Authors:
LU W
NG GI
JOGAI B
LEE JH
PARK CS
Citation: W. Lu et al., IDENTIFICATION OF ROOM-TEMPERATURE PHOTOLUMINESCENCE IN PSEUDOMORPHICMODULATION-DOPED ALGAAS INGAAS/GAAS QUANTUM-WELLS/, Journal of applied physics, 82(3), 1997, pp. 1345-1349
Authors:
WANG H
HOPGOOD AA
NG GI
Citation: H. Wang et al., ANALYSIS OF DARK-LINE DEFECT GROWTH SUPPRESSION IN INXGA1-XAS GAAS STRAINED HETEROSTRUCTURES/, Journal of applied physics, 81(7), 1997, pp. 3117-3123
Authors:
WANG H
NG GI
LAI R
HWANG Y
LO DCW
DIA R
FREUDENTHAL A
BLOCK T
Citation: H. Wang et al., FULLY PASSIVATED W-BAND INALAS INGAAS/INP MONOLITHIC LOW-NOISE AMPLIFIERS/, IEE proceedings. Microwaves, antennas and propagation, 143(5), 1996, pp. 361-366
Authors:
LAI R
NG GI
LO DCW
BLOCK T
WANG H
BIEDENBENDER M
STREIT DC
LIU PH
DIA RM
LIN EW
YEN HC
Citation: R. Lai et al., A HIGH-EFFICIENCY 94-GHZ 0.15-MU-M INGAAS INALAS/INP MONOLITHIC POWERHEMT AMPLIFIER/, IEEE microwave and guided wave letters, 6(10), 1996, pp. 366-368
Authors:
WANG H
NG GI
GILBERT M
OSULLIVAN PJ
Citation: H. Wang et al., SUPPRESSION OF I-V KINK IN DOPED CHANNEL INALAS INGAAS/INP HETEROJUNCTION FIELD-EFFECT TRANSISTOR (HFET) USING SILICON-NITRIDE PASSIVATION/, Electronics Letters, 32(21), 1996, pp. 2026-2027
Authors:
STREIT DC
BLOCK TR
HAN AC
WOJTOWICZ M
UMEMOTO DK
KOBAYASHI K
OKI AK
LIU PH
LAI R
NG GI
Citation: Dc. Streit et al., GAAS AND INP SELECTIVE MOLECULAR-BEAM EPITAXY, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 771-773
Authors:
STREIT DC
BLOCK TR
WOJTOWICZ M
PASCUA D
LAI R
NG GI
LIU PH
TAN KL
Citation: Dc. Streit et al., GRADED-CHANNEL INGAAS-INALAS-INP HIGH-ELECTRON-MOBILITY TRANSISTORS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(2), 1995, pp. 774-776
Authors:
KOBAYASHI KW
LAI R
NG GI
TAN KL
ESFANDIARI R
STREIT DC
BERENZ JB
Citation: Kw. Kobayashi et al., A NOVEL COMPACT MONOLITHIC ACTIVE REGULATED SELF-BIASED INP HEMT AMPLIFIER, IEEE microwave and guided wave letters, 4(7), 1994, pp. 238-240
Authors:
LAI R
BAUTISTA JJ
FUJIWARA B
TAN KL
NG GI
DIA RM
STREIT D
LIU PH
FREUDENTHAL A
LASKAR J
POSPIEZALSKI MW
Citation: R. Lai et al., AN ULTRA-LOW NOISE CRYOGENIC KA-BAND INGAAS INALAS/INP HEMT FRONT-ENDRECEIVER/, IEEE microwave and guided wave letters, 4(10), 1994, pp. 329-331
Authors:
WOJTOWICZ M
LAI R
STREIT DC
NG GI
BLOCK TR
TAN KL
LIU PH
FREUDENTHAL AK
DIA RM
Citation: M. Wojtowicz et al., 0.10-MU-M GRADED INGAAS CHANNEL INP HEMT WITH 305-GHZ FT AND 340-GHZ FMAX, IEEE electron device letters, 15(11), 1994, pp. 477-479
Authors:
NG GI
PAVLIDIS D
SAMELIS A
PEHLKE D
GARCIA JC
HIRTZ JP
Citation: Gi. Ng et al., A COMPARATIVE-STUDY OF GAINP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY CBE USING TBA/TBP AND ASH3/PH3 SOURCES/, IEEE electron device letters, 15(10), 1994, pp. 380-382
Authors:
HONG KS
MARSH PF
NG GI
PAVLIDIS D
HONG CH
Citation: Ks. Hong et al., OPTIMIZATION OF MOVPE GROWN INXAL1-XAS IN0.53GA0.47AS PLANAR HETEROEPITAXIAL SCHOTTKY DIODES FOR TERAHERTZ APPLICATIONS/, I.E.E.E. transactions on electron devices, 41(9), 1994, pp. 1489-1497
Authors:
KWON YW
PAVLIDIS D
MARSH P
NG GI
BROCK TL
Citation: Yw. Kwon et al., EXPERIMENTAL CHARACTERISTICS AND PERFORMANCE ANALYSIS OF MONOLITHIC INP-BASED HEMT MIXERS AT W-BAND, IEEE transactions on microwave theory and techniques, 41(1), 1993, pp. 1-8
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1-19
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