Authors: NIEUWESTEEG KJBM VANDERPUT AA JOHNSON MT DEKORT CGC

Citation: Kjbm. Nieuwesteeg et al., DC-BIAS STRESS OF NONSTOICHIOMETRIC AMORPHOUS-SILICON NITRIDE THIN-FILM DIODES, Journal of applied physics, 79(2), 1996, pp. 842-849

Authors: BIJLSMA SJ VANKRANENBURG H NIEUWESTEEG KJBM PITT MG VERWEIJ JF

Citation: Sj. Bijlsma et al., ELECTRICAL BREAKDOWN OF AMORPHOUS HYDROGENATED SILICON RICH SILICON-NITRIDE THIN-FILM DIODES, I.E.E.E. transactions on electron devices, 43(9), 1996, pp. 1592-1601

Authors: NIEUWESTEEG KJBM VANDERVEEN M VINK TJ

Citation: Kjbm. Nieuwesteeg et al., ON THE CURRENT MECHANISM IN REVERSE-BIASED AMORPHOUS-SILICON SCHOTTKYCONTACTS .1. ZERO-BIAS BARRIER HEIGHTS AND CURRENT TRANSPORT MECHANISM, Journal of applied physics, 74(4), 1993, pp. 2572-2580

Authors: NIEUWESTEEG KJBM VANDERVEEN M VINK TJ SHANNON JM

Citation: Kjbm. Nieuwesteeg et al., ON THE CURRENT MECHANISM IN REVERSE-BIASED AMORPHOUS-SILICON SCHOTTKYCONTACTS .2. REVERSE-BIAS CURRENT MECHANISM, Journal of applied physics, 74(4), 1993, pp. 2581-2589