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Results:
1-7
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Results: 7
Authors:
NINTUNZE N
OSMAN MA
Citation: N. Nintunze et Ma. Osman, HOLE DRIFT VELOCITY IN THE WARPED BAND MODEL OF GAAS, Semiconductor science and technology, 10(1), 1995, pp. 11-17
Authors:
RODRIGUESHERZOG R
SAILER M
HECKER NE
HOPFEL RA
NINTUNZE N
OSMAN MA
Citation: R. Rodriguesherzog et al., ULTRAFAST ENERGY-LOSS OF ELECTRONS IN P-GAAS, Applied physics letters, 67(2), 1995, pp. 264-266
Authors:
NINTUNZE N
OSMAN MA
Citation: N. Nintunze et Ma. Osman, DYNAMICALLY SCREENED ELECTRON-HOLE INTERACTION EFFECTS ON INITIAL THERMALIZATION OF PHOTOEXCITED CARRIERS IN P-GAAS(), Semiconductor science and technology, 9(5), 1994, pp. 485-487
Authors:
NINTUNZE N
OSMAN MA
Citation: N. Nintunze et Ma. Osman, ULTRAFAST RELAXATION OF HIGHLY PHOTOEXCITED CARRIERS IN P-TYPE AND INTRINSIC GAAS, Physical review. B, Condensed matter, 50(15), 1994, pp. 10706-10714
Authors:
NINTUNZE N
OSMAN MA
Citation: N. Nintunze et Ma. Osman, ULTRAFAST RELAXATION OF HIGHLY PHOTOEXCITED CARRIERS IN P-TYPE AND INTRINSIC GAAS, Physical review. B, Condensed matter, 50(15), 1994, pp. 10706-10714
Authors:
IMAM MA
OSMAN MA
NINTUNZE N
Citation: Ma. Imam et al., MODELING THE THRESHOLD VOLTAGE OF SHORT-CHANNEL SILICON-ON-INSULATOR MOSFETS, Electronics Letters, 29(5), 1993, pp. 474-475
Authors:
OSMAN MA
NINTUNZE N
IMAM M
Citation: Ma. Osman et al., CARRIER CARRIER INTERACTION EFFECTS ON TRANSIENT VALLEY REPOPULATION AND VELOCITY IN SILICON, Semiconductor science and technology, 7(3B), 1992, pp. 340-342
Risultati:
1-7
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