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Results:
1-21
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Results: 21
Authors:
NITTONO T
FUKAI YK
HYUGA F
MAEDA N
Citation: T. Nittono et al., ELECTRICAL CHARACTERIZATION OF INGAP GAAS HETEROINTERFACCS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, JPN J A P 2, 37(11A), 1998, pp. 1288-1289
Authors:
ONODERA K
NISHIMURA K
NITTONO T
YAMANE Y
YAMASAKI K
Citation: K. Onodera et al., V-BAND AMPLIFIER USING INGAP INGAAS/GAAS HETEROSTRUCTURE MESFETS WITHASYMMETRIC AU GATE HEAD/, IEEE microwave and guided wave letters, 8(10), 1998, pp. 351-353
Authors:
ONODERA K
NISHIMURA K
NITTONO T
YAMANE Y
YAMASAKI K
Citation: K. Onodera et al., SYMMETRICAL AND ASYMMETRIC INGAP INGAAS/GAAS HETEROSTRUCTURE MESFETS AND THEIR APPLICATION TO V-BAND AMPLIFIERS/, IEICE transactions on electronics, E81C(6), 1998, pp. 868-875
Authors:
WATANABE K
HYUGA F
NITTONO T
Citation: K. Watanabe et al., EFFECT OF ANNEALING ON THE ELECTRICAL AND OPTICAL-PROPERTIES OF GAAS INGAP/N(+)INGAAS/GAAS EPITAXIAL LAYERS/, Journal of applied physics, 84(10), 1998, pp. 5614-5620
Authors:
ARAKI G
NITTONO T
FURUTA T
HYUGA F
Citation: G. Araki et al., NONDESTRUCTIVE EVALUATION OF CARRIER CONCENTRATION IN THE CHANNEL LAYER OF IN0.5GA0.5P IN0.2GA0.8AS/GAAS HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS BY RAMAN-SCATTERING/, Applied physics letters, 73(3), 1998, pp. 372-374
Authors:
NITTONO T
HYUGA F
Citation: T. Nittono et F. Hyuga, REDUCTION OF UNINTENTIONAL IMPURITIES AT THE INTERFACE BETWEEN EPITAXIAL LAYERS AND GAAS SUBSTRATES, Journal of crystal growth, 170(1-4), 1997, pp. 762-766
Authors:
NITTONO T
HYUGA F
Citation: T. Nittono et F. Hyuga, X-RAY-DIFFRACTION ANALYSIS OF INGAP GAAS HETEROINTERFACES GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Journal of applied physics, 81(6), 1997, pp. 2607-2610
Authors:
YAMANE Y
ONODERA K
NITTONO T
NISHIMURA K
YAMASAKI K
KANDA A
Citation: Y. Yamane et al., A DOUBLE LIGHTLY DOPED DRAIN (D-LDD) STRUCTURE H-MESFET FOR MMIC APPLICATIONS, IEEE transactions on microwave theory and techniques, 45(12), 1997, pp. 2229-2233
Authors:
SHIOJIMA K
NISHIMURA K
TOKUMITSU M
NITTONO T
SUGAWARA H
HYUGA F
Citation: K. Shiojima et al., THERMALLY STABLE INGAP GAAS SCHOTTKY CONTACTS USING LOW N CONTENT DOUBLE-LAYER WSIN/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3543-3549
Authors:
NITTONO T
SUGITANI S
HYUGA F
Citation: T. Nittono et al., PHOTOLUMINESCENCE CHARACTERIZATION OF INGAP GAAS HETEROSTRUCTURES GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION/, Journal of applied physics, 78(9), 1995, pp. 5387-5390
Authors:
WATANABE K
HYUGA F
SUGITANI S
NITTONO T
Citation: K. Watanabe et al., EFFECT OF AN INGAP CAN LAYER ON ANNEALING-INDUCED CONDUCTIVITY DEGRADATION IN HEAVILY SI-DOPED N(+)GAAS EPILAYERS, Journal of applied physics, 78(3), 1995, pp. 1793-1797
Authors:
WATANABE K
HYUGA F
YAMAZAKI H
NITTONO T
TAKAOKA H
Citation: K. Watanabe et al., MICROSCOPICALLY INHOMOGENEOUS GAAS INGAP/N(+)INGAAS EPILAYER QUALITIES INDUCED BY SI IMPLANTATION AND ANNEALING/, Journal of applied physics, 78(10), 1995, pp. 5939-5944
Authors:
ITO H
WATANABE N
NITTONO T
FURUTA T
ISHIBASHI T
Citation: H. Ito et al., INFLUENCE OF SUBSTRATE MISORIENTATION ON CURRENT GAIN IN ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION/, JPN J A P 1, 33(7A), 1994, pp. 3853-3859
Authors:
NITTONO T
WATANABE N
ITO H
SUGAHARA H
NAGATA K
NAKAJIMA O
Citation: T. Nittono et al., CARBON AND INDIUM CODOPING IN GAAS FOR RELIABLE ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, JPN J A P 1, 33(11), 1994, pp. 6129-6135
Authors:
ITO H
WATANABE N
NITTONO T
ISHIBASHI T
Citation: H. Ito et al., INFLUENCE OF SUBSTRATE MISORIENTATION ON CARBON INCORPORATION IN GAASBY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION, JPN J A P 2, 33(3B), 1994, pp. 120000399-120000401
Authors:
WATANABE N
NITTONO T
ITO H
Citation: N. Watanabe et al., LOW-TEMPERATURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF INGAAS FOR A NONALLOYED OHMIC CONTACT TO N-GAAS, JPN J A P 2, 33(3A), 1994, pp. 120000271-120000274
Authors:
ISHIBASHI T
SUGAHARA H
ITO H
NITTONO T
NAGATA K
NAKAJIMA O
NAGANO J
OGAWA K
Citation: T. Ishibashi et al., CURRENT GAIN DETERIORATION IN CARBON-DOPED ALGAAS GAAS HETEROJUNCTIONBIPOLAR-TRANSISTORS DURING HIGH-TEMPERATURE BIAS STRESS TESTS/, Materials science & engineering. B, Solid-state materials for advanced technology, 28(1-3), 1994, pp. 257-260
Authors:
NITTONO T
NAGATA K
YAMAUCHI Y
MAKIMURA T
ITO H
NAKAJIMA O
Citation: T. Nittono et al., FABRICATION OF SMALL ALGAAS GAAS HBTS FOR INTEGRATED-CIRCUITS USING NEW BRIDGED BASE ELECTRODE TECHNOLOGY/, IEICE transactions on electronics, E77C(9), 1994, pp. 1455-1463
Authors:
WATANABE N
NITTONO T
ITO H
Citation: N. Watanabe et al., PRECISE CONTROL OF LATTICE STRAIN IN CARBON-DOPED GAAS BY INDIUM CO-DOPING FOR RELIABLE ALGAAS GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Journal of crystal growth, 145(1-4), 1994, pp. 929-934
Authors:
ITO H
NITTONO T
WATANABE N
ISHIBASHI T
Citation: H. Ito et al., COMPOSITIONALLY GRADED EMITTER INGA(AS)P GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, Electronics Letters, 30(25), 1994, pp. 2174-2175
Authors:
WATANABE N
NITTONO T
ITO H
KONDO N
NANISHI Y
Citation: N. Watanabe et al., SURFACE CLEANING OF C-DOPED P-CYCLOTRON-RESONANCE PLASMA( GAAS WITH HYDROGEN ELECTRON), Journal of applied physics, 73(12), 1993, pp. 8146-8150
Risultati:
1-21
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