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Citation: A. Mounib et al., LOW-FREQUENCY NOISE SOURCES IN POLYSILICON EMITTER BJTS - INFLUENCE OF HOT-ELECTRON-INDUCED DEGRADATION AND POSTSTRESS RECOVERY, I.E.E.E. transactions on electron devices, 42(9), 1995, pp. 1647-1652

Authors: POST IRC ASHBURN P NOUAILHAT A

Citation: Irc. Post et al., AN INVESTIGATION OF THE INCONSISTENCY IN BARRIER HEIGHTS FOR PNP AND NPN POLYSILICON EMITTER BIPOLAR-TRANSISTORS USING A NEW TUNNELING MODEL, JPN J A P 1, 33(3A), 1994, pp. 1275-1284

Authors: GIROULTMATLAKOWSKI G BOUSSETA H LETRON B DUTARTRE D WARREN P BOUZID MJ NOUAILHAT A ASHBURN P CHANTRE A

Citation: G. Giroultmatlakowski et al., LOW-TEMPERATURE PERFORMANCE OF SELF-ALIGNED ETCHED POLYSILICON EMITTER PSEUDOHETEROJUNCTION BIPOLAR-TRANSISTORS, Journal de physique. IV, 4(C6), 1994, pp. 111-115

Authors: ASHBURN P NOUAILHAT A CHANTRE A

Citation: P. Ashburn et al., MEASUREMENT OF THE BANDGAP NARROWING IN THE BASE OF SI HOMOJUNCTION AND SI SI1-XGEX HETEROJUNCTION BIPOLAR-TRANSISTORS FROM THE TEMPERATURE-DEPENDENCE OF THE COLLECTOR CURRENT, Journal de physique. IV, 4(C6), 1994, pp. 123-126

Authors: CHANTRE A NOUAILHAT A

Citation: A. Chantre et A. Nouailhat, PROFILE TAIL EFFECTS ON LOW-TEMPERATURE OPERATION OF SILICON BIPOLAR-TRANSISTORS, JPN J A P 1, 32(12A), 1993, pp. 5496-5502